1200V S1M075120D2 SiC Power MOSFET with IGBT Compatible Driving Voltage and Low Reverse Recovery Qrr
Key Attributes
Model Number:
S1M075120D2
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
44A
RDS(on):
75mΩ@15V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.3pF
Input Capacitance(Ciss):
1.02nF
Pd - Power Dissipation:
214W
Gate Charge(Qg):
40nC
Mfr. Part #:
S1M075120D2
Package:
TO-247-3L
Product Description
Product Overview
The S1M075120D2 is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt, combined with high blocking voltage and low on-resistance. The integrated fast intrinsic diode with low reverse recovery (Qrr) contributes to temperature-independent turn-off switching losses. This RoHS and halogen-free compliant component is ideal for applications requiring efficiency improvement, reduced cooling, increased power density, and higher system switching frequencies, including on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch mode power supplies.
Product Attributes
- Brand: (Sichain Semiconductor)
- Material: Silicon Carbide (SiC)
- Certifications: Halogen free, RoHS compliant
- Package Type: TO-247-3L
Technical Specifications
| Type | VDS (V) | IDS (TC = 25, Rth(j-c,max)) (A) | RDS(ON), typ (VGS = 15V, ID = 20A, TJ = 25) (m) | Tj,max () | Marking | Package |
|---|---|---|---|---|---|---|
| S1M075120D2 | 1200 | 44 | 75 | 175 | S1M075120D2 | TO247-3L |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 /+15 | V | Recommended operational values | |
| ID | Continuous drain current | 44 | A | VGS = 15V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 31 | A | VGS = 15V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 80 | A | Pulse width tP limited by Tj,max | Fig.22 |
| PD | Power dissipation | 214 | W | TC= 25C,TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| TM | Mounting torque | 1.8 | Nm lbf-in | M3 or 6-32 screw | |
| Rth(j-c) | Thermal resistance from junction to case | 0.7 | C/W | Fig.21 | |
| Rth(j-a) | Thermal resistance from junction to ambient | 35 | C/W | Not subject to production test. Parameter verified by design/characterization. | |
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 / 2.8 / 3.6 | V | VDS = VGS, ID = 5mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.1 | V | VDS = VGS, ID = 5mA, TJ = 175C | |
| IDSS | Zero gate voltage drain current | 1 | A | VDS = 1200V, VGS = 0V | |
| IGSS | Gate source leakage current | 100 | nA | VGS = 15V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 75 / 90 | m | VGS = 15V, ID = 20A | Fig.4,5,6 |
| RDS(on) | Current drain-source on-state resistance | 110 | m | VGS = 15V, ID = 20A, TJ = 175C | |
| gfs | Transconductance | 9.7 / 9.9 | S | VDS = 20V, ID = 20A | Fig.7 |
| Rg,int | Internal gate resistance | 1.5 | VAC = 25mV, f = 1MHz | ||
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 10A | Fig.8,9,10 |
| VSD | Diode forward voltage | 3.5 | V | VGS = -4V, ISD = 10A, TJ = 175C | |
| Ciss | Input capacitance | 1020 | pF | VDS = 1000V, VGS = 0V TJ = 25C, VAC = 25mV f = 1MHz | Fig.17,18 |
| Coss | Output capacitance | 64 | pF | ||
| Crss | Reverse capacitance | 4.3 | pF | ||
| Eoss | Coss stored energy | 39 | J | Fig.16 | |
| Qgs | Gate source charge | 8.9 | nC | VDS = 800V, VGS = -4/+15V ID = 20A | Fig.12 |
| Qgd | Gate drain charge | 25 | nC | ||
| Qg | Gate charge | 40 | nC | ||
| Eon | Turn on switching energy | 331 | J | VDD = 800V, VGS = -4/+15V ID = 20A, Rg = 0 L = 120uH | Fig.24 |
| Eoff | Turn off switching energy | 29 | J | ||
| td(on) | Turn on delay time | 20 | ns | Fig.26 | |
| tr | Rise time | 14 | ns | ||
| td(off) | Turn off delay time | 15 | ns | ||
| tf | Fall time | 9.5 | ns | ||
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 10A | Fig.8,9,10 |
| VSD | Diode forward voltage | 3.5 | V | VGS = -4V, ISD = 10A TJ = 175C | |
| IS | Continuous diode forward current | 38 | A | Tc = 25C | Note1 |
| trr | Reverse recovery time | 81 | nS | VR = 800V, VGS = -4V ID = 20A di/dt = 700A/S TJ = 150C | |
| Qrr | Reverse recovery charge | 267 | nC | ||
| Irrm | Peak reverse recovery current | 6.2 | A |
2410121937_Sichainsemi-S1M075120D2_C22363610.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
