SG2M012075HJ 750V Silicon Carbide MOSFET with Low On Resistance and Temperature Independent Losses
Key Attributes
Model Number:
SG2M012075HJ
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Pd - Power Dissipation:
517W
Input Capacitance(Ciss):
6.886nF
Gate Charge(Qg):
214nC
Mfr. Part #:
SG2M012075HJ
Package:
TO-247-4L
Product Description
Product Overview
The SG2M012075HJ is a 750V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. Designed for high-speed switching applications, it offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. Its fast intrinsic diode with low reverse recovery (Qrr) and temperature-independent turn-off switching losses contribute to efficiency improvements and reduced cooling requirements. This RoHS compliant and halogen-free component is ideal for on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies, enabling increased power density and higher system switching frequencies.
Product Attributes
- Brand: Qingchun Semiconductor (Ningbo) Co., Ltd.
- Material: Silicon Carbide (SiC)
- Channel Type: N Channel Enhancement
- Compliance: Halogen free, RoHS compliant
Technical Specifications
| Type | VDS | IDS (TC = 25) | RDS(on), typ (VGS = 18V, ID = 88A, TJ = 25) | TJ,max | Marking | Package |
|---|---|---|---|---|---|---|
| SG2M012075HJ | 750V | 160A | 12m | 175 | SG2M012075HJ | TO-247-4L |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 750 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 /+18 | V | Recommended operational values | |
| ID | Continuous drain current | 160 | A | VGS = 18V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 114 | A | VGS = 18V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 320 | A | Pulse width tP limited by TJ,max | Fig.22 |
| PD | Power dissipation | 517 | W | TC= 25C,TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| TM | Mounting torque | 1 8.8 | Nm lbf-in | M3 or 6-32 screw | |
| Rth(j-c) | Thermal resistance from junction to case | 0.23 | C/W | Fig.21 | |
| V(BR)DSS | Drain-source breakdown voltage | 750 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 | V | VDS = VGS, ID = 26mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.8 | V | VDS = VGS, ID = 26mA TJ = 175C | |
| IDSS | Zero gate voltage drain current | 1 | A | VDS = 750V, VGS = 0V | |
| IGSS | Gate source leakage current | 100 | nA | VGS = 18V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 12 | m | VGS = 18V, ID = 88A | Fig.4,5, 6 |
| RDS(on) | Current drain-source on-state resistance | 20 | m | VGS = 18V, ID = 88A, TJ = 175C | |
| gfs | Transconductance | 70 | S | VDS = 20V, ID = 88A | Fig.7 |
| gfs | Transconductance | 61 | S | VDS = 20V, ID = 88A, TJ = 175C | |
| Rg,int | Internal gate resistance | 2.6 | VAC = 25mV, f = 1MHz, open drain | ||
| Ciss | Input capacitance | 6886 | pF | VDS = 500V, VGS = 0V TJ = 25C, VAC = 25mV f = 100kHz | Fig.17, 18 |
| Coss | Output capacitance | 343 | |||
| Crss | Reverse capacitance | 15 | |||
| Eoss | Coss stored energy | 51 | J | Fig.16 | |
| Qgs | Gate source charge | 73 | nC | VDS = 500V, VGS = -4/+18V ID = 88A | Fig.12 |
| Qgd | Gate drain charge | 51 | |||
| Qg | Gate charge | 214 | |||
| Eon | Turn on switching energy | 1013 | J | VDS = 500V, VGS = -4/+18V ID = 88A, Rg = 2.5 L = 16.7H | Fig.26 |
| Eoff | Turn off switching energy | 461 | |||
| tdon | Turn on delay time | 29 | ns | Fig.27 | |
| tr | Rise time | 44 | |||
| tdoff | Turn off delay time | 58 | |||
| tf | Fall time | 16 | |||
| VSD | Diode forward voltage | 4.3 | V | VGS = -4V, ISD = 44A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.9 | V | VGS = -4V, ISD = 44A TJ = 175C | |
| IS | Continuous diode forward current | 108 | A | VGS = -4V, Tc = 25C | Note2 |
| trr | Reverse recovery time | 28 | ns | VR = 500V, VGS = -4V ISD = 88A di/dt = 4283A/s TJ = 175C | |
| Qrr | Reverse recovery charge | 900 | nC | ||
| Irrm | Peak reverse recovery current | 56 | A |
Package Drawing
TO-247-4L-A
2504101957_Sichainsemi-SG2M012075HJ_C42456085.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
