1200V Silicon Carbide MOSFET SG2M027120LJ Low On Resistance Temperature Independent Switching Losses
Key Attributes
Model Number:
SG2M027120LJ
Product Custom Attributes
Mfr. Part #:
SG2M027120LJ
Package:
TO-247-4L
Product Description
Product Overview
The SG2M027120LJ is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device features a fast intrinsic diode with low reverse recovery charge (Qrr) and temperature-independent turn-off switching losses. Its benefits include reduced cooling effort and requirements, improved efficiency, increased power density, and the ability to operate at higher system switching frequencies. This RoHS compliant and halogen-free component is suitable for applications such as on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies.
Product Attributes
- Brand: TriQSiCTM
- Material: Silicon Carbide (SiC)
- Channel Type: N Channel Enhancement
- Package Type: TO-247-4L
- Certifications: Halogen free, RoHS compliant
- Manufacturer:
Technical Specifications
| Type | VDS | IDS (TC = 25, Rth (j-c),max) | RDS(on), typ (VGS = 18V, ID = 40A, TJ = 25) | TJ,max | Marking | Package |
|---|---|---|---|---|---|---|
| SG2M027120LJ | 1200V | 85A | 26m | 175 | SG2M027120LJ | TO-247-4L |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -10 /+22 | V | Absolute maximum values | Note1 |
| VGSpulse | Gate-source voltage,max. transient voltage | -10 /+25 | V | tp0.5s, D0.01 | |
| VGSop | Gate source voltage | -4 /+18 | V | Recommended operational values | |
| ID | Continuous drain current | 85 | A | VGS = 18V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 60 | A | VGS = 18V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 170 | A | Pulse width tP limited by TJ,max | Fig.22 |
| PD | Power dissipation | 341 | W | TC= 25C,TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| TM | Mounting torque | 1.8 | Nm lbf-in | M3 or 6-32 screw | |
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 - 3.6 | V | VDS = VGS, ID = 11mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.1 | V | VDS = VGS, ID = 11mA TJ = 175C | |
| IDSS | Zero gate voltage drain current | 1 - 10 | A | VDS = 1200V, VGS = 0V | |
| IGSS | Gate source leakage current | 100 | nA | VGS = 18V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 30 - 45 | m | VGS = 15V, ID = 40A | Fig.4,5, 6 |
| RDS(on) | Current drain-source on-state resistance | 49 | m | VGS = 15V, ID = 40A, TJ = 175C | |
| RDS(on) | Current drain-source on-state resistance | 26 - 36 | m | VGS = 18V, ID = 40A | |
| RDS(on) | Current drain-source on-state resistance | 47 | m | VGS = 18V, ID = 40A, TJ = 175C | |
| gfs | Transconductance | 30 | S | VDS = 20V, ID = 40A | Fig.7 |
| gfs | Transconductance | 27 | S | VDS = 20V, ID = 40A, TJ = 175C | |
| Rg,int | Internal gate resistance | 3 | VAC = 25mV, f = 1MHz, open drain | ||
| Ciss | Input capacitance | 2280 | pF | VDS = 1000V, VGS = 0V TJ = 25C, VAC = 25mV f = 100kHz | Fig.17, 18 |
| Coss | Output capacitance | 129 | pF | ||
| Crss | Reverse capacitance | 6.6 | pF | ||
| Eoss | Coss stored energy | 71 | J | Fig.16 | |
| Qgs | Gate source charge | 24 | nC | VDS = 800V, VGS = -4/+18V ID = 40A | Fig.12 |
| Qgd | Gate drain charge | 22 | nC | ||
| Qg | Gate charge | 73 | nC | ||
| Eon | Turn on switching energy | 378 | J | VDS = 800V, VGS = -4/+18V ID = 40A, Rg = 2.5 L = 16.7H | Fig.26 |
| Eoff | Turn off switching energy | 108 | J | ||
| tdon | Turn on delay time | 15 | ns | Fig.27 | |
| tr | Rise time | 16 | ns | ||
| tdoff | Turn off delay time | 31 | ns | ||
| tf | Fall time | 9 | ns | ||
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 20A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.3 | V | VGS = -4V, ISD = 20A TJ = 175C | |
| IS | Continuous diode forward current | 82 | A | VGS = -4V, Tc = 25C | Note2 |
| trr | Reverse recovery time | 35 | ns | VR = 800V, VGS = -4V ISD = 40A di/dt = 2827A/s TJ = 175C | |
| Qrr | Reverse recovery charge | 681 | nC | ||
| Irrm | Peak reverse recovery current | 33 | A |
2510131755_Sichainsemi-SG2M027120LJ_C52109937.pdf
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