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quality Dual digital transistors ROHM UMH2N-TN providing compact solution for inverter interface and driver applications factory
quality Dual digital transistors ROHM UMH2N-TN providing compact solution for inverter interface and driver applications factory

Dual digital transistors ROHM UMH2N-TN providing compact solution for inverter interface and driver applications

Key Attributes
Model Number: UMH2N-TN
Product Custom Attributes
Output Voltage(VO(on)):
100mV
Input Resistor:
47kΩ
Resistor Ratio:
1
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMH2N-TN
Package:
SOT-363
Product Description

Product Overview

The EMH2, UMH2N, and IMH2A are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices feature two independent transistor elements within a single package, enabling reduced mounting costs and board space. They are compatible with automatic mounting machines and offer interference-free operation. The series provides a supply voltage of up to 50V and a maximum collector current of 100mA.

Product Attributes

  • Brand: ROHM
  • Product Series: EMH2 / UMH2N / IMH2A
  • Type: Dual Digital Transistors

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
EMH2 SOT-563 (EMT6) 1616 T2R 180 8 8000 H2
UMH2N SOT-363 (UMT6) 2021 TN 180 8 3000 H2
IMH2A SOT-457 (SMT6) 2928 T110 180 8 3000 H2
Parameter Symbol Conditions Values (Min.) Values (Typ.) Values (Max.) Unit
Absolute Maximum Ratings (Ta = 25C) VCC 50 V
VIN -10 40 V
IO 30 mA
IC(MAX)*1 100 mA
Power Dissipation PD*2*3 (EMH2) 150 mW
PD*2*3 (UMH2N) 150 mW
PD*2*4 (IMH2A) 300 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Electrical Characteristics (Ta = 25C) VI(off) VCC = 5V, IO = 100A 0.5 V
VI(on) VO = 0.3V, IO = 2mA 3.0 V
VO(on) IO = 10mA, II = 0.5mA 100 300 mV
II VI = 5V 180 A
IO(off) VCC = 50V, VI = 0V 500 nA
GI VO = 5V, IO = 5mA 68 -
R1 32.9 47 61.1 k
R2/R1 0.8 1.0 1.2 -
Transition frequency fT*1 VCE = 10V, IE = -5mA, f = 100MHz 250 MHz

Note:

  • *1: Characteristics of built-in transistor
  • *2: Each terminal mounted on a reference land
  • *3: 120mW per element must not be exceeded.
  • *4: 200mW per element must not be exceeded.

lApplication

  • INVERTER
  • INTERFACE
  • DRIVER

2304140030_ROHM-UMH2N-TN_C122979.pdf

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