Dual digital transistor power component ROHM IMD10AT108 offering low saturation voltage for circuits
Key Attributes
Model Number:
IMD10AT108
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
13kΩ
Resistor Ratio:
120
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
IMD10AT108
Package:
SOT-457
Product Description
Product Overview
The ROHM IMD10A is a power management component featuring dual digital transistors within a single SMT package. It is designed to drive up to 500mA and offers low VCE(sat) for reduced power dissipation. This component is suitable for general electronic equipment applications.
Product Attributes
- Brand: ROHM
- Part Number: IMD10A
- Package: SMT6 (EIAJ: SC-74)
- Marking Code: D10
- Basic ordering unit: 3000 pieces
- Origin: Japan (implied by ROHM Co., Ltd.)
Technical Specifications
| IMD10A - Power management (dual digital transistors) | |||
|---|---|---|---|
| Parameter | Symbol | Limits | Unit |
| Absolute Maximum Ratings (Ta=25C) | |||
| Supply voltage | VCC | -50 | V |
| Input voltage | VIN | -5 to +5 | V |
| Collector current | IC | -500 | mA |
| Power dissipation (Total) | Pd | 300(TOTAL) | mW |
| Power dissipation (per element) | * 200mW per element must not be exceeded. | mW | |
| Storage temperature | Tstg | -55 to +150 | C |
| Junction temperature | Tj | 150 | C |
| Electrical Characteristics (Ta=25C) | |||
| DTr1 | |||
| Collector-base breakdown voltage | BVCBO | 50 | V |
| Collector-emitter breakdown voltage | BVCEO | 50 | V |
| Emitter-base breakdown voltage | BVEBO | 5 | V |
| Collector cutoff current | ICBO | 100 | A |
| Emitter cutoff current | IEBO | 7 | A |
| Collector-emitter saturation voltage | VCE(sat) | 0.5 (Typ.) | V |
| DC current transfer ratio | hFE | 250 (Typ.) | |
| Transition frequency | fT | 250 (Typ.) | MHz |
| Input resistance | R1 | 10 (Typ.) | k |
| Resistance ratio | R2 / R1 | 100 (Typ.) | |
| DTr2 | |||
| Collector-base breakdown voltage | BVCBO | 50 | V |
| Collector-emitter breakdown voltage | BVCEO | 50 | V |
| Emitter-base breakdown voltage | BVEBO | 5 | V |
| Collector cutoff current | ICBO | 100 | A |
| Emitter cutoff current | IEBO | 7 | A |
| Collector-emitter saturation voltage | VCE(sat) | 0.5 (Typ.) | V |
| DC current transfer ratio | hFE | 250 (Typ.) | |
| Transition frequency | fT | 250 (Typ.) | MHz |
| Input resistance | R1 | 10 (Typ.) | k |
| Resistance ratio | R2 / R1 | 100 (Typ.) | |
Dimensions (Unit : mm)
SMT6 package dimensions are not explicitly detailed in a table but are implied by the SMT6 designation.
Electrical Characteristic Curves
Graphical data is provided for:
- DC current gain vs. Output current characteristics (Fig.1)
- Output voltage vs. Output current characteristics (Fig.2)
- Input voltage vs. Output current (ON characteristics) (Fig.3)
- Output current vs. Input voltage (OFF characteristics) (Fig.4)
- DC current gain vs. Collector current (Fig.5)
- Collector-emitter saturation voltage vs. Collector current (Fig.6)
1810171819_ROHM-IMD10AT108_C308702.pdf
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