Built in Bias Resistors Digital Transistor ROHM DTA114TKAT146 PNP Type for Easy On Off Control in Circuits

Product Overview

The DTA114T series is a PNP digital transistor featuring built-in bias resistors, simplifying circuit design by eliminating the need for external input resistors. This series is ideal for configuring inverter circuits and is suitable for applications requiring easy on/off condition setting. Complementary NPN types are also available. The DTA114T series is designed for use in inverter, interface, and driver applications.

Product Attributes

• Brand: ROHM
• Product Type: Digital Transistor (Bias Resistor Built-in Transistor)
• Transistor Type: PNP

Technical Specifications

Model	Package	Package Size	Collector-Emitter Voltage (VCEO)	Collector Current (IC)	Input Resistance (R1)	Power Dissipation (PD*)	Collector-Emitter Breakdown Voltage (BVCEO)	Collector-Emitter Saturation Voltage (VCE(sat))	DC Current Gain (hFE)	Transition Frequency (fT*)
DTA114TM	SOT-723	1212	-50V	-100mA	7-13 k (Typ. 10k)	150 mW	-50V (Min.)	-300 mV (Max.)	100-600 (Typ. 250)	250 MHz (Typ.)
DTA114TEB	SOT-416FL	1616	-50V	-100mA	7-13 k (Typ. 10k)	150 mW	-50V (Min.)	-300 mV (Max.)	100-600 (Typ. 250)	250 MHz (Typ.)
DTA114TE	SOT-416	1616	-50V	-100mA	7-13 k (Typ. 10k)	150 mW	-50V (Min.)	-300 mV (Max.)	100-600 (Typ. 250)	250 MHz (Typ.)
DTA114TUB	SOT-323FL	2021	-50V	-100mA	7-13 k (Typ. 10k)	200 mW	-50V (Min.)	-300 mV (Max.)	100-600 (Typ. 250)	250 MHz (Typ.)
DTA114TUA	SOT-323	2021	-50V	-100mA	7-13 k (Typ. 10k)	200 mW	-50V (Min.)	-300 mV (Max.)	100-600 (Typ. 250)	250 MHz (Typ.)
DTA114TKA	SOT-346	2928	-50V	-100mA	7-13 k (Typ. 10k)	200 mW	-50V (Min.)	-300 mV (Max.)	100-600 (Typ. 250)	250 MHz (Typ.)

Absolute Maximum Ratings (Ta = 25C):

Parameter	Symbol	Values	Unit
Collector-base voltage	VCBO	-50	V
Collector-emitter voltage	VCEO	-50	V
Emitter-base voltage	VEBO	-5	V
Collector current	IC	-100	mA
Junction temperature	Tj	150
Range of storage temperature	Tstg	-55 to +150

Electrical Characteristics (Ta = 25C):

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Collector-base breakdown voltage	BVCBO	IC = -50A	-50	-	-	V
Collector-emitter breakdown voltage	BVCEO	IC = -1mA	-50	-	-	V
Emitter-base breakdown voltage	BVEBO	IE = -50A	-5	-	-	V
Collector cut-off current	ICBO	VCB = -50V	-	-	-500	nA
Emitter cut-off current	IEBO	VEB = -4V	-	-	-500	nA
Collector-emitter saturation voltage	VCE(sat)	IC = -10mA, IB = -1mA	-	-	-300	mV
DC current gain	hFE	VCE = -5V, IC = -1mA	100	250	600	-
Input resistance	R1	-	-	10	-	k
Transition frequency	fT*	VCE = -10V, IE = 5mA, f = 100MHz	-	250	-	MHz

*1: Each terminal mounted on a reference land.
*2: Characteristics of built-in transistor.
2006151335_ROHM-DTA114TKAT146_C600861.pdf