60V N Channel MOSFET Siliup SP60N02BGNK with Low Gate Charge and Tested Single Pulse Avalanche Energy
Key Attributes
Model Number:
SP60N02BGNK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3mΩ@10V;2.7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
1 N-channel
Output Capacitance(Coss):
1.3nF
Input Capacitance(Ciss):
3.91nF
Pd - Power Dissipation:
120W
Gate Charge(Qg):
101nC@10V
Mfr. Part #:
SP60N02BGNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP60N02BGNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for hard switched and high-frequency circuits, as well as uninterruptible power supplies. It is available in a PDFN5X6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel Power MOSFET
- Package: PDFN5X6-8L
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 60 | V | |||
| RDS(on) | RDS(on) | 10V | 2.3 | m | ||
| RDS(on) | RDS(on) | 4.5V | 2.7 | m | ||
| ID | ID | 120 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | (Tc=25C) | 120 | A | ||
| Continuous Drain Current (Tc=100C) | ID | (Tc=100C) | 80 | A | ||
| Pulse Drain Current | IDM | Tested | 480 | A | ||
| Single Pulse Avalanche Energy | EAS | 635 | mJ | |||
| Power Dissipation (Tc=25C) | PD | (Tc=25C) | 120 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.04 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1.2 | 1.7 | 2.2 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=40A | - | 2.3 | 2.9 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=40A | - | 2.7 | 4.3 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - | 5441 | - | pF |
| Output Capacitance | Coss | - | 2201 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 136 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=30A | - | 101 | - | nC |
| Gate-Source Charge | Qgs | - | 17 | - | ||
| Gate-Drain Charge | Qgd | - | 21 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=30A, VGS=10V, RG=3 | - | 15 | - | nS |
| Rise Time | tr | - | 34 | - | ||
| Turn-Off Delay Time | td(off) | - | 76 | - | ||
| Fall Time | tf | - | 95 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 120 | A | |
| Reverse Recovery Time | trr | IS=20 A,di/dt=100 A/sTJ=25 | - | 45 | - | nS |
| Reverse Recovery Charge | Qrr | - | 41 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | ||||
| E | 5.974 - 6.126 | 0.235 - 0.241 | ||||
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | ||||
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | ||||
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | ||||
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | ||||
| k | 1.190 - 1.390 | 0.047 - 0.055 | ||||
| b | 0.350 - 0.450 | 0.014 - 0.018 | ||||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | ||||
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | ||||
| H | 0.574 - 0.726 | 0.023 - 0.029 | ||||
| 10 - 12 | 10 - 12 | |||||
Order Information
| Device | Package | Unit/Tape |
| SP60N02BGNK | PDFN5X6-8L | 5000 |
2504101957_Siliup-SP60N02BGNK_C22385420.pdf
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