Surface Mount PDFN5X6 8L Package Siliup SP60N08GDNK 60V N Channel Power MOSFET for Motor Control Applications

Key Attributes
Model Number: SP60N08GDNK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
40A
RDS(on):
7.6mΩ@10V;9.3mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
2 N-Channel
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
1.158nF
Output Capacitance(Coss):
369pF
Gate Charge(Qg):
25.9nC@10V
Mfr. Part #:
SP60N08GDNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP60N08GDNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, a surface mount package, and advanced Split Gate Trench Technology. This MOSFET is 100% Single Pulse avalanche energy tested and is suitable for applications such as DC-DC converters and motor control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP60N08GDNK
  • Package: PDFN5X6-8L

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
Drain-Source Voltage V(BR)DSS 60 V
On-state Resistance RDS(on) @10V 7.6 9.8 m
On-state Resistance RDS(on) @4.5V 9.3 14.5 m
Continuous Drain Current ID 40 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS -20 20 V
Continuous Drain Current (Tc=25C) ID 40 A
Continuous Drain Current (Tc=100C) ID 27 A
Pulse Drain Current IDM Tested 160 A
Single Pulse Avalanche Energy EAS 152 mJ
Power Dissipation (Tc=25C) PD 70 W
Thermal Resistance Junction-to-Case RJC 1.78 C/W
Maximum Junction Temperature TJ -55 150 C
Storage Temperature Range TSTG -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250mA 60 V
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V 1 uA
Gate Leakage Current IGSS VGS=20V, VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1 1.8 2.5 V
Drain-Source On-state Resistance RDS(ON) VGS=10V, ID=20A 7.6 9.8 m
Drain-Source On-state Resistance RDS(ON) VGS=4.5V, ID=15A 9.3 14.5 m
Dynamic Characteristics
Input Capacitance Ciss VGS=0V, VDS=30V, F=1MHz 1158 pF
Output Capacitance Coss 369 pF
Reverse Transfer Capacitance Crss 23 pF
Total Gate Charge Qg VDS=30V, VGS=10V, ID=10A 25.9 nC
Gate-Source Charge Qgs 7.1 nC
Gate-Drain Charge Qg d 6.8 nC
Switching Characteristics
Turn-On Delay Time td(on) VDD=30V, ID=10A, VGS=10V, RG=4.7 17 nS
Rise Time tr 23 nS
Turn-Off Delay Time td(off) 31.8 nS
Fall Time tf 25.4 nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 1.2 V
Maximum Body-Diode Continuous Current IS 40 A
Reverse Recovery Time Trr IS=20 A, di/dt=100 A/sTJ=25 31 nS
Reverse Recovery Charge Qrr 28 nC
Package Information (PDFN5x6-8L)
Dimension Symbol Millimeters (Min) Millimeters (Max) Inches (Min) Inches (Max)
A A 0.900 1.000 0.035 0.039
A3 A3 0.254 REF. 0.010 REF.
D D 4.944 5.096 0.195 0.201
E E 5.974 6.126 0.235 0.241
D1 D1 1.470 1.870 0.058 0.074
D2 D2 0.470 0.870 0.019 0.034
E1 E1 3.375 3.575 0.133 0.141
D3 D3 4.824 4.976 0.190 0.196
E2 E2 5.674 5.826 0.223 0.229
k k 1.190 1.390 0.047 0.055
b b 0.350 0.450 0.014 0.018
e e 1.270 TYP. 0.050 TYP.
L L 0.559 0.711 0.022 0.028
L1 L1 0.424 0.576 0.017 0.023
H H 0.574 0.726 0.023 0.029
10 12 10 12

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