Surface Mount PDFN5X6 8L Package Siliup SP60N08GDNK 60V N Channel Power MOSFET for Motor Control Applications
Product Overview
The SP60N08GDNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, a surface mount package, and advanced Split Gate Trench Technology. This MOSFET is 100% Single Pulse avalanche energy tested and is suitable for applications such as DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP60N08GDNK
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| On-state Resistance | RDS(on) | @10V | 7.6 | 9.8 | m | |
| On-state Resistance | RDS(on) | @4.5V | 9.3 | 14.5 | m | |
| Continuous Drain Current | ID | 40 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | ||
| Continuous Drain Current (Tc=25C) | ID | 40 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 27 | A | |||
| Pulse Drain Current | IDM | Tested | 160 | A | ||
| Single Pulse Avalanche Energy | EAS | 152 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 70 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.78 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | 1 | uA | ||
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.8 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=20A | 7.6 | 9.8 | m | |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=15A | 9.3 | 14.5 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | 1158 | pF | ||
| Output Capacitance | Coss | 369 | pF | |||
| Reverse Transfer Capacitance | Crss | 23 | pF | |||
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=10A | 25.9 | nC | ||
| Gate-Source Charge | Qgs | 7.1 | nC | |||
| Gate-Drain Charge | Qg d | 6.8 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=10A, VGS=10V, RG=4.7 | 17 | nS | ||
| Rise Time | tr | 23 | nS | |||
| Turn-Off Delay Time | td(off) | 31.8 | nS | |||
| Fall Time | tf | 25.4 | nS | |||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 40 | A | |||
| Reverse Recovery Time | Trr | IS=20 A, di/dt=100 A/sTJ=25 | 31 | nS | ||
| Reverse Recovery Charge | Qrr | 28 | nC | |||
| Package Information (PDFN5x6-8L) | ||||||
| Dimension | Symbol | Millimeters (Min) | Millimeters (Max) | Inches (Min) | Inches (Max) | |
| A | A | 0.900 | 1.000 | 0.035 | 0.039 | |
| A3 | A3 | 0.254 REF. | 0.010 REF. | |||
| D | D | 4.944 | 5.096 | 0.195 | 0.201 | |
| E | E | 5.974 | 6.126 | 0.235 | 0.241 | |
| D1 | D1 | 1.470 | 1.870 | 0.058 | 0.074 | |
| D2 | D2 | 0.470 | 0.870 | 0.019 | 0.034 | |
| E1 | E1 | 3.375 | 3.575 | 0.133 | 0.141 | |
| D3 | D3 | 4.824 | 4.976 | 0.190 | 0.196 | |
| E2 | E2 | 5.674 | 5.826 | 0.223 | 0.229 | |
| k | k | 1.190 | 1.390 | 0.047 | 0.055 | |
| b | b | 0.350 | 0.450 | 0.014 | 0.018 | |
| e | e | 1.270 TYP. | 0.050 TYP. | |||
| L | L | 0.559 | 0.711 | 0.022 | 0.028 | |
| L1 | L1 | 0.424 | 0.576 | 0.017 | 0.023 | |
| H | H | 0.574 | 0.726 | 0.023 | 0.029 | |
| 10 | 12 | 10 | 12 | |||
2506271720_Siliup-SP60N08GDNK_C49257249.pdf
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