N Channel MOSFET Siliup SP010N07AGNK Featuring Low Gate Charge and High Avalanche Energy Capability

Key Attributes
Model Number: SP010N07AGNK
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.2mΩ@10V;8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
388pF
Input Capacitance(Ciss):
1.942nF
Pd - Power Dissipation:
92W
Gate Charge(Qg):
67nC@10V
Mfr. Part #:
SP010N07AGNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP010N07AGNK is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is designed for power switching applications, battery management, and uninterruptible power supplies. It has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010N07AGNK
  • Technology: Advanced Split Gate Trench Technology
  • Package: PDFN5X6-8L
  • Channel Type: N-Channel

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS 100 V
RDS(on)TYP @10V 6.2 m
RDS(on)TYP @4.5V 8 m
ID 70 A
Absolute Maximum Ratings
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 70 A
Continuous Drain Current (Tc=100) ID 50 A
Pulsed Drain Current IDM 280 A
Single Pulse Avalanche Energy EAS 272 mJ
Power Dissipation (Tc=25) PD 92 W
Thermal Resistance Junction-to-Case RJC 1.36 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 100 - - V
Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1 uA
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 1.7 2.5 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 30A - 6.2 7.8 m
Drain-Source ON Resistance RDS(ON) VGS = 4.5V, ID = 25A - 8 10.5 m
Dynamic Characteristics
Input Capacitance Ciss VDS =50V, VGS = 0V, f = 1.0MHz - 1942 - pF
Output Capacitance Coss - 388 - pF
Reverse Transfer Capacitance Crss - 12 - pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=50A - 67 - nC
Gate-Source Charge Qgs - 12 -
Gate-Drain Charge Qg d - 21 -
Switching Characteristics
Turn-On Delay Time td(on) VGS = 50V, VDS =50V, ID=50A RG = 4.7 - 12 - nS
Rise Time tr - 11 -
Turn-Off Delay Time td(off) - 42 -
Fall Time tf - 6 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 70 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 59 - nS
Reverse Recovery Charge Qrr - 88 - nC

Package Information (PDFN5X6-8L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

Order Information

Device Package Unit/Tape
SP010N07AGNK PDFN5X6-8L 5000

2504101957_Siliup-SP010N07AGNK_C22385421.pdf

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