Power management MOSFET Siliup SP1012CNK featuring fast switching speeds and PDFN5X6 8L package design
Key Attributes
Model Number:
SP1012CNK
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
8A;7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V;100mΩ@4.5V;230mΩ@10V;240mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF;18pF
Number:
-
Output Capacitance(Coss):
25pF;30pF
Input Capacitance(Ciss):
695pF;721pF
Pd - Power Dissipation:
20W
Gate Charge(Qg):
13.6nC@10V;16nC@10V
Mfr. Part #:
SP1012CNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP1012CNK is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management applications. It features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. The device is 100% Single Pulse avalanche energy tested, making it suitable for DC-DC converters and motor control applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP1012CNK
- Package: PDFN5X6-8L
- Certifications: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Rating | P-Channel Conditions | P-Channel Rating | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100V | -100V | V | ||
| RDS(on) Typ @ 10V | RDS(on) | VGS=10V | 90m | N/A | m | |
| RDS(on) Typ @ 4.5V | RDS(on) | VGS=4.5V | 100m | VGS=-4.5V | 240m | m |
| Continuous Drain Current | ID | Tc=25C | 8A | Tc=25C | -7A | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100V | -100V | V | ||
| Gate-Source Voltage | VGS | 20V | 20V | V | ||
| Continuous Drain Current (Tc=25C) | ID | 8A | -7A | A | ||
| Pulse Drain Current Tested | IDM | 32A | -28A | A | ||
| Single pulsed avalanche energy1 | EAS | 20mJ | 49mJ | mJ | ||
| Power Dissipation (Tc=25C) | PD | 20W | 20W | W | ||
| Thermal Resistance Junction-to-Case | RJC | 6.25C/W | 6.25C/W | C/W | ||
| Storage Temperature Range | TSTG | -55 to 150C | -55 to 150C | C | ||
| Operating Junction Temperature Range | TJ | -55 to 150C | -55 to 150C | C | ||
| N-Channel Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100V | N/A | N/A | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | 1A | N/A | N/A | A |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100nA | 100nA | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 - 2.5V | N/A | N/A | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 4A | 90 - 115m | N/A | N/A | m |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | 695pF | N/A | N/A | pF |
| Output Capacitance | Coss | VDS=50V , VGS=0V , f=1MHz | 25pF | N/A | N/A | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V , VGS=0V , f=1MHz | 17pF | N/A | N/A | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=5A | 13.6nC | N/A | N/A | nC |
| Gate-Source Charge | Qgs | VDS=50V , VGS=10V , ID=5A | 2.1nC | N/A | N/A | nC |
| Gate-Drain Charge | Qgd | VDS=50V , VGS=10V , ID=5A | 1.9nC | N/A | N/A | nC |
| Turn-On Delay Time | Td(on) | VDD=50V VGS=10V , RG=3, ID=3A | 7nS | N/A | N/A | nS |
| Rise Time | Tr | VDD=50V VGS=10V , RG=3, ID=3A | 1.5nS | N/A | N/A | nS |
| Turn-Off Delay Time | Td(off) | VDD=50V VGS=10V , RG=3, ID=3A | 15.3nS | N/A | N/A | nS |
| Fall Time | Tf | VDD=50V VGS=10V , RG=3, ID=3A | 2nS | N/A | N/A | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2V | N/A | N/A | V |
| Maximum Body-Diode Continuous Current | IS | 10A | N/A | A | ||
| Reverse recover time | Trr | IS=3A, di/dt=100A/us, Tj=25 | 31nS | N/A | N/A | nS |
| Reverse recovery charge | Qrr | IS=3A, di/dt=100A/us, Tj=25 | 23nC | N/A | N/A | nC |
| P-Channel Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | N/A | N/A | VGS=0V , ID=-250uA | -100V | V |
| Drain-Source Leakage Current | IDSS | N/A | N/A | VDS=-80V , VGS=0V , TJ=25 | -1A | A |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100nA | VGS=20V , VDS=0V | 100nA | nA |
| Gate Threshold Voltage | VGS(th) | N/A | N/A | VGS=VDS , ID =-250uA | -1.0 - -2.5V | V |
| Static Drain-Source On-Resistance | RDS(ON) | N/A | N/A | VGS =-10V, ID =-2A | 230 - 290m | m |
| Input Capacitance | Ciss | N/A | N/A | VDS=-50V , VGS=0V , f=1MHz | 721pF | pF |
| Output Capacitance | Coss | N/A | N/A | VDS=-50V , VGS=0V , f=1MHz | 30pF | pF |
| Reverse Transfer Capacitance | Crss | N/A | N/A | VDS=-50V , VGS=0V , f=1MHz | 18pF | pF |
| Total Gate Charge | Qg | N/A | N/A | VDS=-50V , VGS=-10V , ID=-3A | 16nC | nC |
| Gate-Source Charge | Qgs | N/A | N/A | VDS=-50V , VGS=-10V , ID=-3A | 3nC | nC |
| Gate-Drain Charge | Qgd | N/A | N/A | VDS=-50V , VGS=-10V , ID=-3A | 2.5nC | nC |
| Turn-On Delay Time | Td(on) | N/A | N/A | VDD=-50V VGS=-10V , RG=6, ID=-3A | 9nS | nS |
| Rise Time | Tr | N/A | N/A | VDD=-50V VGS=-10V , RG=6, ID=-3A | 6.5nS | nS |
| Turn-Off Delay Time | Td(off) | N/A | N/A | VDD=-50V VGS=-10V , RG=6, ID=-3A | 28nS | nS |
| Fall Time | Tf | N/A | N/A | VDD=-50V VGS=-10V , RG=6, ID=-3A | 7.5nS | nS |
| Diode Forward Voltage | VSD | N/A | N/A | VGS=0V , IS=-1A , TJ=25 | -1.2V | V |
| Maximum Body-Diode Continuous Current | IS | N/A | N/A | VGS=0V , IS=-1A , TJ=25 | -7A | A |
| Reverse recover time | Trr | N/A | N/A | IS=-5A, di/dt=-100A/us, Tj=25 | 26.5nS | nS |
| Reverse recovery charge | Qrr | N/A | N/A | IS=-5A, di/dt=-100A/us, Tj=25 | 31nC | nC |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254 REF. | 0.010 REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 1.470 | 1.870 | 0.058 | 0.074 | ||
| D2 | 0.470 | 0.870 | 0.019 | 0.034 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D3 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270 TYP. | 0.050 TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
Note: 1. The EAS Test condition is VDD=50V, VGS =10V, L = 0.5mH, Rg=25 for N-Channel and VDD=-50V, VGS =-10V, L = 0.5mH, Rg=25 for P-Channel.
2504101957_Siliup-SP1012CNK_C22385428.pdf
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