PNP Digital Transistor ROHM DTA023EEBTL Featuring Built In Resistors for Easy On Off Circuit Control
Key Attributes
Model Number:
DTA023EEBTL
Product Custom Attributes
Output Voltage(VO(on)):
100mV
Input Resistor:
2.2kΩ
Resistor Ratio:
1
Number:
1 PNP Pre-Biased
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTA023EEBTL
Package:
SOT-416
Product Description
Product Overview
The DTA023E series is a PNP digital transistor featuring built-in biasing resistors (R1 = R2 = 2.2k). This integrated design simplifies circuit configuration, enabling the creation of inverter circuits without external input resistors. The device is designed for ease of use, requiring only the setting of on/off conditions for operation. It is suitable for applications such as inverters, interfaces, and drivers. Complementary NPN types are available in the DTC023E series.
Product Attributes
- Brand: ROHM
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| DTA023EM | SOT-723 (VMT3) | 1212 | T2L | 180 | 8 | 8000 | 55 |
| DTA023EEB | SOT-416FL (EMT3F) | 1616 | TL | 180 | 8 | 3000 | 55 |
| DTA023EUB | SOT-323FL (UMT3F) | 2021 | TL | 180 | 8 | 3000 | 55 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) | VCC | -50 | V | |||
| VIN | -12 | 10 | V | |||
| IO | -100 | mA | ||||
| IC(MAX)*1 | -100 | mA | ||||
| PD (DTA023EM) | 150 | mW | ||||
| PD (DTA023EEB) | 150 | mW | ||||
| PD (DTA023EUB) | 200 | mW | ||||
| Tj | 150 | |||||
| Tstg | -55 | +150 | ||||
| Electrical Characteristics (Ta = 25C) | VI(off) | VCC = -5V, IO = -100A | - | - | -0.8 | V |
| VI(on) | VO = -0.3V, IO = -5mA | -2.6 | - | - | V | |
| VO(on) | IO = -10mA, II = -1mA | - | -100 | -250 | mV | |
| II | VI = -5V | - | - | -3.6 | mA | |
| IO(off) | VCC = -50V, VI = 0V | - | - | -500 | nA | |
| GI | VO = -10V, IO = -20mA | 20 | - | - | - | |
| R1 | 1.54 | 2.2 | 2.86 | k | ||
| R2/R1 | 0.8 | 1.0 | 1.2 | - | ||
| fT*1 | VCE = -10V, IE = 5mA, f = 100MHz | - | 250 | - | MHz |
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
2109190230_ROHM-DTA023EEBTL_C509859.pdf
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