40V N Channel MOSFET Siliup SP40N01GTO with Fast Switching and Single Pulse Avalanche Energy Testing

Key Attributes
Model Number: SP40N01GTO
Product Custom Attributes
Pd - Power Dissipation:
300W
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
230A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1mΩ@10V;1.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 N-channel
Output Capacitance(Coss):
1.85nF
Input Capacitance(Ciss):
5.5nF
Gate Charge(Qg):
128nC@10V
Mfr. Part #:
SP40N01GTO
Package:
TOLL-8L
Product Description

Product Overview

The SP40N01GTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management solutions. It features 100% single pulse avalanche energy testing for enhanced reliability.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 40N01G
  • Package: TOLL

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS V(BR)DSS 40 V
RDS(on) TYP RDS(on) @10V 1.0 m
RDS(on) TYP RDS(on) @4.5V 1.5 m
ID ID 230 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25,unless otherwise noted) 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID (Tc=25) 230 A
Continuous Drain Current ID (Tc=100) 153 A
Pulsed Drain Current IDM 920 A
Single Pulse Avalanche Energy EAS 1089 mJ
Total Power Dissipation PD (Tc=25) 300 W
Thermal Resistance Junction-to-Case RJC 0.41 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 47 - V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 1.7 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=50A - 1.0 1.25 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=50A - 1.5 2 m
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 5500 - pF
Output Capacitance Coss - 1850 - pF
Reverse Transfer Capacitance Crss - 65 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=85A - 128 - nC
Gate-Source Charge Qgs - 19 - nC
Gate-Drain Charge Qg d - 12 - nC
Turn-On Delay Time Td(on) VDD=20V , VGS=10V , RG=1.6, ID=85A - 13.5 - nS
Rise Time Tr - 8.8 - nS
Turn-Off Delay Time Td(off) - 52 - nS
Fall Time Tf - 9.6 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 230 A
Reverse Recovery Time Trr IS=50A, di/dt=100A/us, TJ=25 - 55 - nS
Reverse Recovery Charge Qrr - 53 - nC

TOLL Package Information

Symbol Dimensions In Millimeters Min. Nom. Max.
A 2.20 2.30 2.40
b 0.65 0.75 0.85
C 0.508 REF
D 10.25 10.40 10.55
D1 2.85 3.00 3.15
E 9.75 9.90 10.05
E1 9.65 9.80 9.95
E2 8.95 9.10 9.25
E3 7.25 7.40 7.55
e 1.20 BSC
F 1.05 1.20 1.35
H 11.55 11.70 11.85
H1 6.03 6.18 6.33
H2 6.85 7.00 7.15
H3 3.00 BSC
L 1.55 1.70 1.85
L1 0.55 0.7 0.85
L2 0.45 0.6 0.75
M 0.08 REF.
8 10 12
K 4.25 4.40 4.55

2504101957_Siliup-SP40N01GTO_C22385347.pdf
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