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quality Siliup SP11M65TG 650V MOSFET Featuring Low Gate Charge and High Avalanche Energy Rating for Power Supplies factory
quality Siliup SP11M65TG 650V MOSFET Featuring Low Gate Charge and High Avalanche Energy Rating for Power Supplies factory

Siliup SP11M65TG 650V MOSFET Featuring Low Gate Charge and High Avalanche Energy Rating for Power Supplies

Key Attributes
Model Number: SP11M65TG
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
RDS(on):
340mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
3pF
Number:
1 N-channel
Output Capacitance(Coss):
53pF
Input Capacitance(Ciss):
702pF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
SP11M65TG
Package:
TO-220F
Product Description

Product Overview

The SP11M65TG is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-efficiency power applications. It features fast switching speeds, low gate charge, and a low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy. Ideal applications include PD chargers, large screen displays, telecom power supplies, and server power supplies.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP11M65TG
  • Marking: 11M65
  • Package: TO-220F

Technical Specifications

Parameter Symbol Test Condition Rating Unit
Product Summary
Drain-Source Breakdown Voltage V(BR)DSS 650 V
RDS(on) Typ. @10V 0.34
Continuous Drain Current ID 11 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) 650 V
Gate-Source Voltage VGS (Ta=25) 30 V
Continuous Drain Current (Tc=25) ID (Tc=25) 11 A
Continuous Drain Current (Tc=100) ID (Tc=100) 7 A
Pulsed Drain Current IDM 33 A
Power Dissipation (Tc=25) PD (Tc=25) 31 W
Single Pulsed Avalanche Energy EAS 220 mJ
Junction-to-Case Thermal Resistance RJC 4.03 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 650 V
Drain Cut-Off Current IDSS VDS = 520V, VGS = 0V - 1 uA
Gate Leakage Current IGSS VGS = 30V, VDS = 0V - 0.1 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 - 4 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 5.5A - 0.42
Dynamic Characteristics
Input Capacitance Ciss VDS=50V, VGS = 0V, f = 1.0MHz - 702 pF
Output Capacitance Coss - 53 pF
Reverse Transfer Capacitance Crss - 3 pF
Total Gate Charge Qg VDS=520V , VGS=10V , ID=10.5A - 15 nC
Gate-Source Charge Qgs - 4
Gate-Drain Charge Qgd - 5
Switching Characteristics
Turn-On Delay Time td(on) VGS = 10V, VDS = 520V, ID=10.5A , RG = 25 - 24 nS
Rise Time tr - 24
Turn-Off Delay Time td(off) - 34
Fall Time tf - 37
Source-Drain Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - 1.2 V
Maximum Body-Diode Continuous Current IS - 11 A
Reverse Recovery Time trr IS=5.5A, di/dt=100A/us, TJ=25 - 280 nS
Reverse Recovery Charge Qrr - 3.5 uC

2504101957_Siliup-SP11M65TG_C22466835.pdf
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