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quality Digital transistor ROHM UMH33NTN featuring built in bias resistors and inverter circuit capability for muting factory
quality Digital transistor ROHM UMH33NTN featuring built in bias resistors and inverter circuit capability for muting factory

Digital transistor ROHM UMH33NTN featuring built in bias resistors and inverter circuit capability for muting

Key Attributes
Model Number: UMH33NTN
Product Custom Attributes
DC Current Gain:
2700@10mA,5V
Emitter-Base Voltage VEBO:
40V
Operating Temperature:
-55℃~+150℃
Current - Collector(Ic):
400mA
Input Resistor:
2.2kΩ
Number:
-
Pd - Power Dissipation:
150mW
Collector - Emitter Voltage VCEO:
20V
Mfr. Part #:
UMH33NTN
Package:
SOT-363
Product Description

Product Overview

The UMH33N is a digital transistor featuring built-in bias resistors, designed for muting applications. It integrates two DTC923TUB chips within a single SOT-363 (UMT6) package. Key advantages include a high breakdown voltage of 40V (BVEBO), low output ON resistance (typically 0.6), and the ability to configure an inverter circuit without external input resistors due to the integrated R1 (2.2k) biasing resistor. This product is suitable for muting functions.

Product Attributes

  • Brand: ROHM
  • Package Type: SOT-363 (UMT6)
  • Taping Code: TR
  • Reel Size: 180 mm
  • Tape Width: 8 mm
  • Basic Ordering Unit: 3000 pcs
  • Marking: H33

Technical Specifications

Parameter Symbol Values Unit Conditions
Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common>
Collector-base voltage VCBO 40 V
Collector-emitter voltage VCEO 20 V
Emitter-base voltage VEBO 40 V
Collector current IC 400 mA
Power dissipation PD*1*2 150 mW/Total
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common>
Collector-base breakdown voltage BVCBO 40 V IC = 50A
Collector-emitter breakdown voltage BVCEO 20 V IC = 1mA
Emitter-base breakdown voltage BVEBO 40 V IE = 50A
Collector cut-off current ICBO - 500 nA VCB = 40V
Emitter cut-off current IEBO - 500 nA VEB = 40V
Collector-emitter saturation voltage VCE(sat) 30 to 100 mV IC = 30mA, IB = 3mA
DC current gain hFE 820 to 2700 - VCE = 5V, IC = 10mA
Transition frequency fT*3 35 MHz VCE = 6V, IE = -4mA, f = 10MHz
Input resistance R1 1.54 to 2.86 k
Output ON resistance Ron 0.6 Vi = 5V, RL = 1k, f = 1kHz

*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 Characteristics of built-in transistor


2209081200_ROHM-UMH33NTN_C5157682.pdf
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