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quality Power MOSFET 100V N Channel Siliup SP010N02GHTO with Fast Switching and Low Drain Source On Resistance factory
quality Power MOSFET 100V N Channel Siliup SP010N02GHTO with Fast Switching and Low Drain Source On Resistance factory

Power MOSFET 100V N Channel Siliup SP010N02GHTO with Fast Switching and Low Drain Source On Resistance

Key Attributes
Model Number: SP010N02GHTO
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
260A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 N-channel
Output Capacitance(Coss):
1.608nF
Input Capacitance(Ciss):
9.625nF
Pd - Power Dissipation:
280W
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
SP010N02GHTO
Package:
TOLL
Product Description

Product Overview

The SP010N02GHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, DC-DC converters, and power management systems. This MOSFET has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010N02GHTO
  • Channel Type: N-Channel
  • Technology: Siliup

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS - 100 - - V
Drain-Source ON Resistance RDS(on) VGS = 10V, ID = 20A - 1.6 2 m
Continuous Drain Current ID Tc=25 - - 260 A
Continuous Drain Current ID Tc=100 - - 175 A
Pulsed Drain Current IDM - - - 860 A
Power Dissipation PD Tc=25 - - 280 W
Single Pulsed Avalanche Energy EAS - - - 1560 mJ
Thermal Resistance, Junction-Case RJC - - 0.45 - /W
Operation and Storage Temperature Tstg, Tj - -55 - 175
Gate Source Voltage VGS - - - 20 V
Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1 A
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 A
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.7 3.2 4 V
Input Capacitance Ciss VDS =50V, VGS = 0V, f = 1.0MHz - 9625 - pF
Output Capacitance Coss - - 1608 - pF
Reverse Transfer Capacitance Crss - - 75 - pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=20A - 160 - nC
Gate-Source Charge Qgs - - 31 - -
Gate-Drain Charge Qg d - - 37 - -
Turn-On Delay Time td(on) VGS = 10V, VDS = 50V, RL=2.5 , RG = 6.0 - 35 - ns
Rise Time tr - - 68 - ns
Turn-Off Delay Time td(off) - - 150 - ns
Fall Time tf - - 105 - ns
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V

Note: EAS is tested at starting Tj = 25, VDD=50V,VGS = 10V,L = 0.5mH, Rg=25m.

Package Information

Symbol Dimensions (Millimeters)
Min. Nom. Max.
A 2.20 2.30 2.40
b 0.65 0.75 0.85
C 0.508 REF -
D 10.25 10.40 10.55
D1 2.85 3.00 3.15
E 9.75 9.90 10.05
E1 9.65 9.80 9.95
E2 8.95 9.10 9.25
E3 7.25 7.40 7.55
e 1.20 BSC -
F 1.05 1.20 1.35
H 11.55 11.70 11.85
H1 6.03 6.18 6.33
H2 6.85 7.00 7.15
H3 3.00 BSC -
L 1.55 1.70 1.85
L1 0.55 0.7 0.85
L2 0.45 0.6 0.75
M 0.08 REF. -
8 10 12
K 4.25 4.40 4.55

2410010301_Siliup-SP010N02GHTO_C22385352.pdf

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