Digital Transistor ROHM DTC043TEBTL Featuring Built In Biasing Resistors for Driver and Interface Applications
Key Attributes
Model Number:
DTC043TEBTL
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
4.7kΩ
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC043TEBTL
Package:
SOT-416
Product Description
Product Overview
The DTC043T series is a range of NPN digital transistors featuring built-in biasing resistors (R1 = 4.7k). This integration simplifies circuit design by eliminating the need for external input resistors, allowing for inverter circuit configurations with straightforward on/off condition settings. These transistors are ideal for inverter, interface, and driver applications.
Product Attributes
- Brand: ROHM
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking | Power Dissipation (mW) |
|---|---|---|---|---|---|---|---|---|
| DTC043TM | SOT-723 (VMT3) | 1212 | T2L | 180 | 8 | 8000 | 49 | 150*1 |
| DTC043TEB | SOT-416FL (EMT3F) | 1616 | TL | 180 | 8 | 3000 | 49 | 150*1 |
| DTC043TUB | SOT-323FL (UMT3F) | 2021 | TL | 180 | 8 | 3000 | 49 | 200*1 |
Absolute Maximum Ratings (Ta = 25C)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-base voltage | VCBO | 50 | V |
| Collector-emitter voltage | VCEO | 50 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 100 | mA |
| Junction temperature | Tj | 150 | |
| Range of storage temperature | Tstg | -55 to +150 |
Electrical Characteristics (Ta = 25C)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | IC = 50A | 50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = 50A | 5 | - | - | V |
| Collector cut-off current | ICBO | VCB = 50V | - | - | 500 | nA |
| Emitter cut-off current | IEBO | VEB = 4V | - | - | 500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = 5mA, IB = 0.5mA | - | 50 | 150 | mV |
| DC current gain | hFE | VCE = 10V, IC = 5mA | 100 | - | 600 | - |
| Input resistance | R1 | - | - | 4.7 | - | k |
| Transition frequency | fT*2 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
2201211400_ROHM-DTC043TEBTL_C2971747.pdf
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