N Channel MOSFET Half Bridge Power Module SCILICON SLC500MM15SHN2 Automotive Grade for UPS Systems
Key Attributes
Model Number:
SLC500MM15SHN2
Product Custom Attributes
Mfr. Part #:
SLC500MM15SHN2
Product Description
Product Overview
The SLC500MM15SHN2 is an automotive-grade 150V N-Channel MOSFET half-bridge power module designed for high-current density applications. It features high ruggedness, easy paralleling, and low on-state resistance, making it suitable for DC/DC converters, UPS systems, AC motor control, and solar applications.
Product Attributes
- Brand: SCILICON
- Type: N-Channel MOSFET, Half-Bridge Power Module
- Certification: Automotive Grade
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Static Characteristics | ||||||
| Drain-source breakdowm voltage | V(BR)DSS | VGS=0,ID=1mA,Tj=25 | 150 | V | ||
| Gate threshold voltage | VGS(th) | VDS=150V | 4 | 5 | V | |
| Zero gate voltage drain current | IDSS | VGS=0V, Tj=125 | 400 | nA | ||
| Gate-source leakage current | IGSS | VDS=0V,VGS=20V,Tj=25 | 400 | nA | ||
| Drain-source on-state resistance | RDS(ON) | VGS=10V,ID=100A,Tj=25 | 1.2 | m | ||
| Drain-source on-state resistance | RDS(ON) | VGS=10V,ID=100A,Tj=100 | 1.7 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=40V,ID=100A,VGS=10V | 20 | nF | ||
| Output Capacitance | Coss | VGS=0 | 26 | nF | ||
| Reverse transfer capacitance | Crss | VDS=40V | 120 | pF | ||
| Turn-on delay time | td(on) | VDS=96V,VGS=15V,ID=530A,RG,ext=10,Tj=25 | 173 | ns | ||
| Turn-off delay time | td(off) | VDS=96V,VGS=15V,ID=530A,RG,ext=10,Tj=25 | 1538 | nC | ||
| Total gate charge | QG | VDS=96V,VGS=15V,ID=530A,Tj=25 | 524 | nC | ||
| Turn-on energy loss per pulse | Eon | TBD | mJ | |||
| Turn-off energy loss per pulse | Eoff | TBD | mJ | |||
| Body Diode Characteristics | ||||||
| Diode continuous forward current | IS | 500 | A | |||
| Diode pulse forward current | IS,pulse | 1500 | A | |||
| Forward voltage | VSD | IS=50A,VGS=0V,Tj=25 | 1.2 | V | ||
| Reverse recovery time | trr | VR=50V,IS=50A,di/dt=200A/us | 500 | ns | ||
| Reverse recovery charge | Qrr | VR=50V,IS=50A,di/dt=200A/us | 1000 | nC | ||
| Maximum Rated Values | ||||||
| Drain-source voltage | VDS | Tj=25 | 150 | V | ||
| DC drain current | ID nom | Tj=25 | 500 | A | ||
| Pulsed drain current | ID,pulse | VGS=10V,TC=25 | 3500 | A | ||
| Avalanche energy, single pulse | EAS | L=2mH,Rg=25 | 2880 | mJ | ||
| Power dissipation | Ptot | TvjMAX=175TC=25 | 1500 | W | ||
| Module Features | ||||||
| Thermal resistance, junction to heatsink | RthJH | 0.157 | K/W | |||
| Storage temperature | Tstg | -55 | 175 | |||
| Maximum baseplate operation temperature | TBPmax | 100 | ||||
| Weight | G | 36.5 | g | |||
| Module baseplate material | Material of module baseplate | Cu | ||||
| Internal isolation | Internal isolation | Al2O3 | ||||
| Isolation test voltage | VISOL | RMS,f=50Hz,t=0.3s | TBD | kV | ||
2506271720_SCILICON-SLC500MM15SHN2_C49257182.pdf
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