Silicon Carbide MOSFET Siliup SP25N120CTF Featuring 1200V Drain Source Voltage and Low RDSon for Switching
Key Attributes
Model Number:
SP25N120CTF
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
52A
Operating Temperature -:
-55℃~+175℃
RDS(on):
60mΩ@18V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Pd - Power Dissipation:
171W
Input Capacitance(Ciss):
1.92nF
Output Capacitance(Coss):
80pF
Gate Charge(Qg):
87nC
Mfr. Part #:
SP25N120CTF
Package:
TO-247
Product Description
Product Overview
The SP25N120CTF is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high-speed switching with low capacitances, high blocking voltage with low RDS(on), and is designed for easy paralleling and simple driving. This RoHS compliant device is suitable for applications such as Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, and High Voltage DC/DC Converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Material: Silicon Carbide (SiC)
- Package: TO-247
- Certifications: RoHS Compliant
- Device Code: 25N120C
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 1200 | V | |||
| On-Resistance | RDS(on)TYP | @18V | 60 | m | ||
| Drain Current | ID | 25 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 1200 | V | ||
| Gate-Source Voltage | VGSMAX | (Ta=25) | -8/+22 | V | ||
| Recommended Gate-Source Voltage | VGSop | (Ta=25) | -4/+18 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 52 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 25 | A | ||
| Pulsed Drain Current | IDM | 80 | A | |||
| Single Pulse Avalanche Energy | EAS | 1125 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 171 | W | ||
| Power Dissipation | PD | (Tc=100) | 68 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.73 | /W | |||
| Storage Temperature Range | TSTG | -55 | 175 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 1200 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=1200V , VGS=0V , TJ=25 | - | 1 | - | uA |
| Gate-Source Leakage Current | IGSS | VGS=18V , VDS=0V | - | - | 250 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =5mA, Tj=25 | 2 | 2.5 | 4 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =5mA, Tj=100 | - | 1.8 | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V , ID=20A, Tj=25 | - | 60 | 75 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V , ID=20A, Tj=150 | - | 90 | - | m |
| Input Capacitance | Ciss | VDS=1000V , VGS=0V , f=1MHz | - | 1920 | - | pF |
| Output Capacitance | Coss | - | 80 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 5 | - | pF | |
| Total Gate Charge | Qg | VDS=800V , VGS=-4/+18V , ID=20A | - | 87 | - | nC |
| Gate-Source Charge | Qgs | - | 29 | - | nC | |
| Gate-Drain Charge | Qgd | - | 31 | - | nC | |
| Rise Time | Tr | - | 75 | - | ns | |
| Turn-Off Delay Time | Td(off) | - | 89 | - | ns | |
| Fall Time | Tf | - | 29 | - | ns | |
| Diode Forward Voltage | VSD | VGS=-4V , ISD=20A , TJ=25 | - | 4.5 | - | V |
| Diode Forward Voltage | VSD | VGS=-4V , ISD=20A , TJ=150 | - | 4 | - | V |
| Continuous Diode Forward Current | IS | VGS=-4V, Tc=25C | - | 52 | - | A |
| Continuous Diode Forward Current | IS | VGS=-4V, Tc=100C | - | 25 | - | A |
| Reverse Recovery Time | trr | VGS=-4V, ISD=20A, VR=800V, di/dt=3700A/s | - | 32 | - | nS |
| Reverse Recovery Charge | Qrr | - | 265 | - | nC | |
| Peak Reverse Recovery Current | Irrm | - | 16 | - | A | |
| Package Information (TO-247) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.850 - 5.150 | 0.191 - 0.200 | ||||
| A1 | 2.200 - 2.600 | 0.087 - 0.102 | ||||
| b | 1.000 - 1.400 | 0.039 - 0.055 | ||||
| b1 | 2.800 - 3.200 | 0.110 - 0.126 | ||||
| b2 | 1.800 - 2.200 | 0.071 - 0.087 | ||||
| c | 0.500 - 0.700 | 0.020 - 0.028 | ||||
| c1 | 1.900 - 2.100 | 0.075 - 0.083 | ||||
| D | 15.450 - 15.750 | 0.608 - 0.620 | ||||
| E1 | 3.500 REF. | 0.138 REF. | ||||
| E2 | 3.600 REF. | 0.142 REF. | ||||
| L | 40.900 - 41.300 | 1.610 - 1.626 | ||||
| L1 | 24.800 - 25.100 | 0.976 - 0.988 | ||||
| L2 | 20.300 - 20.600 | 0.799 - 0.811 | ||||
| 7.100 - 7.300 | 0.280 - 0.287 | |||||
| e | 5.450 TYP. | 0.215 TYP. | ||||
| H | 5.980 REF. | 0.235 REF. | ||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
2504101957_Siliup-SP25N120CTF_C22466832.pdf
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