200V N Channel Power MOSFET with Low Gate Charge and Fast Switching Siliup SP020N09GHTF in TO 247 Package
Key Attributes
Model Number:
SP020N09GHTF
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
130A
RDS(on):
9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
437pF
Pd - Power Dissipation:
300W
Input Capacitance(Ciss):
4.183nF
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
SP020N09GHTF
Package:
TO-247
Product Description
Product Overview
The SP020N09GHTF is a 200V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for PWM applications, hard switched and high frequency circuits, and power management systems. The device is supplied in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP020N09GHTF
- Channel Type: N-Channel
- Package: TO-247
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 200 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @10V | 9 | m | ||
| Continuous Drain Current | ID | 130 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 200 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current (Tc=25) | ID | (Ta=25, unless otherwise noted) | 130 | A | ||
| Continuous Drain Current (Tc=100) | ID | (Ta=25, unless otherwise noted) | 87 | A | ||
| Pulsed Drain Current | IDM | (Ta=25, unless otherwise noted) | 520 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25, unless otherwise noted) | 1296 | mJ | ||
| Power Dissipation (Tc=25) | PD | (Ta=25, unless otherwise noted) | 300 | W | ||
| Thermal Resistance Junction-Case | RJC | (Ta=25, unless otherwise noted) | 0.42 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 200 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 160V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 9 | 11.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =100V, VGS = 0V, f = 1.0MHz | - | 4183 | - | pF |
| Output Capacitance | Coss | VDS =100V, VGS = 0V, f = 1.0MHz | - | 437 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS =100V, VGS = 0V, f = 1.0MHz | - | 12 | - | pF |
| Total Gate Charge | Qg | VDS=100V , VGS=10V , ID=20A | - | 48 | - | nC |
| Gate-Source Charge | Qgs | VDS=100V , VGS=10V , ID=20A | - | 31 | - | nC |
| Gate-Drain Charge | Qgd | VDS=100V , VGS=10V , ID=20A | - | 11 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =100V, RL=3.5 RG = 6.0 | - | 13 | - | nS |
| Rise Time | tr | VGS = 10V, VDS =100V, RL=3.5 RG = 6.0 | - | 25 | - | nS |
| Turn-Off Delay Time | td(off) | VGS = 10V, VDS =100V, RL=3.5 RG = 6.0 | - | 31 | - | nS |
| Fall Time | tf | VGS = 10V, VDS =100V, RL=3.5 RG = 6.0 | - | 25 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 130 | A | |
| Reverse Recovery Time | Trr | IS=140A, di/dt=100A/us, TJ=25 | - | 165 | - | nS |
| Reverse Recovery Charge | Qrr | IS=140A, di/dt=100A/us, TJ=25 | - | 521 | - | nC |
| Package Information (TO-247) | ||||||
| Dimension | Symbol | Millimeters (Min/Max) | Inches (Min/Max) | |||
| A | 4.850 / 5.150 | 0.191 / 0.200 | ||||
| A1 | 2.200 / 2.600 | 0.087 / 0.102 | ||||
| b2 | 1.800 / 2.200 | 0.071 / 0.087 | ||||
| b | 1.000 / 1.400 | 0.039 / 0.055 | ||||
| b1 | 2.800 / 3.200 | 0.110 / 0.126 | ||||
| c | 0.500 / 0.700 | 0.020 / 0.028 | ||||
| c1 | 1.900 / 2.100 | 0.075 / 0.083 | ||||
| D | 15.450 / 15.750 | 0.608 / 0.620 | ||||
| E1 | 3.500 REF. | 0.138 REF. | ||||
| E2 | 3.600 REF. | 0.142 REF. | ||||
| L | 40.900 / 41.300 | 1.610 / 1.626 | ||||
| L1 | 24.800 / 25.100 | 0.976 / 0.988 | ||||
| L2 | 20.300 / 20.600 | 0.799 / 0.811 | ||||
| 7.100 / 7.300 | 0.280 / 0.287 | |||||
| e | 5.450 TYP. | 0.215 TYP. | ||||
| H1 | 5.980 REF. | 0.235 REF. | ||||
| h | 0.000 / 0.300 | 0.000 / 0.012 | ||||
2504101957_Siliup-SP020N09GHTF_C22466813.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
