Power Switching MOSFET Siliup SP010N15GTQ 100V N-Channel Device with Low Rdson and TO2203L Package
Key Attributes
Model Number:
SP010N15GTQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
48A
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Output Capacitance(Coss):
210pF
Input Capacitance(Ciss):
1.062nF
Pd - Power Dissipation:
76W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SP010N15GTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP010N15GTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies. The MOSFET is packaged in a TO-220-3L configuration.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N15GTQ
- Technology: Advanced Split Gate Trench Technology
- Package Type: TO-220-3L
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| RDS(on) Typ | @10V | 15 | m | |||
| RDS(on) Typ | @4.5V | 18 | m | |||
| Continuous Drain Current | ID | 48 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 48 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 32 | A | ||
| Pulsed Drain Current | IDM | 192 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 126 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 76 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.64 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.0 | 1.8 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 15 | 19 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 15A | - | 18 | 24 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1062 | - | pF |
| Output Capacitance | Coss | - | 210 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 14 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=20A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | 5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 2.7 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =50V, ID=20A RG = 2.2 | - | 38 | - | nS |
| Rise Time | tr | - | 12 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 51 | - | nS | |
| Fall Time | tf | - | 17 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 55 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 40 | - | nS |
| Reverse Recovery Charge | Qrr | - | 42 | - | nC | |
| Package Information (TO-220-3L) | ||||||
| Dimensions (mm) | A | 4.400 - 4.600 | mm | |||
| Dimensions (mm) | A1 | 2.250 - 2.550 | mm | |||
| Dimensions (mm) | b | 0.710 - 0.910 | mm | |||
| Dimensions (mm) | b1 | 1.170 - 1.370 | mm | |||
| Dimensions (mm) | c | 0.330 - 0.650 | mm | |||
| Dimensions (mm) | c1 | 1.200 - 1.400 | mm | |||
| Dimensions (mm) | D | 9.910 - 10.250 | mm | |||
| Dimensions (mm) | E | 8.950 - 9.750 | mm | |||
| Dimensions (mm) | E1 | 12.650 - 13.050 | mm | |||
| Dimensions (mm) | e | 2.540 TYP. | mm | |||
| Dimensions (mm) | e1 | 4.980 - 5.180 | mm | |||
| Dimensions (mm) | F | 2.650 - 2.950 | mm | |||
| Dimensions (mm) | H | 7.900 - 8.100 | mm | |||
| Dimensions (mm) | h | 0.000 - 0.300 | mm | |||
| Dimensions (mm) | L | 12.900 - 13.400 | mm | |||
| Dimensions (mm) | L1 | 2.850 - 3.250 | mm | |||
| Dimensions (mm) | V | 6.900 REF. | mm | |||
| Dimensions (mm) | 3.400 - 3.800 | mm | ||||
Note: 1. EAS test condition is VDD=50V, VGS=10V, L=0.5mH, RG=25.
2506271720_Siliup-SP010N15GTQ_C49257219.pdf
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