N Channel MOSFET 120V Siliup SP012N02AGHTO with Low Reverse Transfer Capacitance and Fast Switching
Key Attributes
Model Number:
SP012N02AGHTO
Product Custom Attributes
Drain To Source Voltage:
120V
Configuration:
-
Current - Continuous Drain(Id):
300A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
48pF@60V
Number:
1 N-channel
Pd - Power Dissipation:
320W
Input Capacitance(Ciss):
12.7nF@60V
Gate Charge(Qg):
213nC@10V
Mfr. Part #:
SP012N02AGHTO
Package:
TOLL
Product Description
Product Overview
The SP012N02AGHTO is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-speed power switching applications, it features fast switching, low gate charge, and low RDS(on). Its low reverse transfer capacitances and 100% single pulse avalanche energy testing make it suitable for DC-DC converters and power management systems. The device is supplied in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP012N02AGHTO
- Channel Type: N-Channel
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 120 | V |
| RDS(on) | - | @10V | - | 1.9 | - | m |
| ID | - | - | - | - | 300 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | - | - | 120 | V |
| Gate-Source Voltage | VGS | - | - | 20 | - | V |
| Continuous Drain Current (Tc=25) | ID | (Tc=25) | - | - | 300 | A |
| Continuous Drain Current (Tc=100) | ID | (Tc=100) | - | - | 200 | A |
| Pulsed Drain Current | IDM | - | - | - | 1200 | A |
| Single Pulse Avalanche Energy | EAS | - | - | 2056 | - | mJ |
| Power Dissipation (Tc=25) | PD | (Tc=25) | - | - | 320 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | 0.39 | - | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 120 | 130 | - | V |
| Drain Cut-Off Current | IDSS | VDS = 96V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.5 | 3.3 | 4.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 50A | - | 1.9 | 2.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 60V, VGS = 0V, f = 1.0MHz | - | 12700 | - | pF |
| Output Capacitance | Coss | - | - | 870 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 48 | - | pF |
| Total Gate Charge | Qg | VDS=60V , VGS=10V , ID=75A | - | 213 | - | nC |
| Gate-Source Charge | Qgs | - | - | 58 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 59 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 60V, ID = 75A, RG = 1.6 | - | 24 | - | nS |
| Rise Time | tr | - | - | 28 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | 79 | - | nS |
| Fall Time | tf | - | - | 31 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 300 | A |
| Reverse Recovery Time | trr | IS=100A, di/dt=100A/us, TJ=25 | - | 112 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 289 | - | nC |
| Ordering Information | ||||||
| Device | Package | Unit/Tape | - | - | - | - |
| SP012N02AGHTO | TOLL | 2000 | - | - | - | - |
2412031713_Siliup-SP012N02AGHTO_C42403242.pdf
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