NPN Digital Transistor ROHM DTC124EE3TL Featuring Built in Bias Resistors for Inverter and Driver

Key Attributes
Model Number: DTC124EE3TL
Product Custom Attributes
Output Voltage(VO(on)):
300mV@10mA,0.5mA
Input Resistor:
28.6kΩ
Resistor Ratio:
1
Mfr. Part #:
DTC124EE3TL
Product Description

Product Overview

The DTC124E series is a line of NPN digital transistors featuring built-in bias resistors (R1 = R2 = 22k). This integration simplifies circuit design by eliminating the need for external input resistors, allowing for inverter circuit configurations with only on/off condition settings. These transistors are suitable for applications such as inverters, interfaces, and drivers. Complementary PNP types are also available in the DTA124E series.

Product Attributes

  • Brand: ROHM
  • Type: NPN Digital Transistor (Bias Resistor Built-in Transistor)

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Quantity (pcs) Marking VCC (MAX) IC(MAX) R1 R2 PD (mW) fT (MHz)
DTC124EM SOT-723 1212 T2L 180 8 8000 25 50V 100mA 22k 22k 150 250
DTC124EEB SOT-416FL 1616 TL 180 8 3000 25 50V 100mA 22k 22k 150 250
DTC124EE3 SOT-416 1616 TL 180 8 3000 25 50V 100mA 22k 22k 150 250
DTC124EUB SOT-323FL 2021 TL 180 8 3000 25 50V 100mA 22k 22k 200 250
DTC124EU3 SOT-323 2021 T106 180 8 3000 25 50V 100mA 22k 22k 200 250
DTC124EKA SOT-346 2928 T146 180 8 3000 25 50V 100mA 22k 22k 200 250
Parameter Symbol Conditions Min. Typ. Max. Unit
Supply voltage VCC 50 V
Input voltage VIN -10 40 V
Output current IO 30 mA
Collector current IC(MAX)*1 100 mA
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Input voltage (off) VI(off) VCC = 5V, IO = 100A - - 0.5 V
Input voltage (on) VI(on) VO = 0.2V, IO = 5mA 3.0 - - V
Output voltage (on) VO(on) IO = 10mA, II = 0.5mA - 100 300 mV
Input current II VI = 5V - - 360 A
Output current (off) IO(off) VCC = 50V, VI = 0V - - 500 nA
DC current gain GI VO = 5V, IO = 5mA 56 - - -
Input resistance R1 - 15.4 28.6 k
Resistance ratio R2/R1 - 0.8 1.2 -
Transition frequency*1 fT VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference land.


2401251540_ROHM-DTC124EE3TL_C20108237.pdf

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