Shenzhen ruichips Semicon RU3091M N Channel Power MOSFET with ultra low on resistance and fast switching speed

Key Attributes
Model Number: RU3091M
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-
RDS(on):
4.5mΩ@4.5V,35A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
290pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.28nF
Output Capacitance(Coss):
580pF
Pd - Power Dissipation:
54W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
RU3091M
Package:
PDFN-8(5.8x4.9)
Product Description

Product Overview

The RU3091M is an N-Channel Advanced Power MOSFET designed for high-efficiency power applications. It features a super high dense cell design, ultra-low on-resistance, and fast switching speeds, making it ideal for DC/DC converters, load switches, and synchronous rectification. This device is 100% avalanche tested and available in lead-free and green (RoHS compliant) versions.

Product Attributes

  • Brand: Ruichips Semiconductor
  • Model: RU3091M
  • Package: PDFN5060
  • Certifications: RoHS Compliant (Lead Free and Green Devices Available)

Technical Specifications

SymbolParameterTest ConditionRU3091MUnit
Absolute Maximum Ratings
VDSSDrain-Source Voltage30V
VGSSGate-Source Voltage±20V
TJMaximum Junction Temperature150°C
TSTGStorage Temperature Range-55 to 150°C
ISDiode Continuous Forward CurrentTC=25°C50A
IDPPulse Drain Current300μs Pulse, TC=25°C360A
IDContinuous Drain Current@TC(VGS=10V)TC=25°C90A
IDContinuous Drain Current@TC(VGS=10V)TC=100°C57A
IDContinuous Drain Current@TA(VGS=10V)TA=25°C28A
IDContinuous Drain Current@TA(VGS=10V)TA=70°C21A
PDMaximum Power Dissipation@TCTC=25°C54W
PDMaximum Power Dissipation@TCTC=100°C22W
PDMaximum Power Dissipation@TATA=25°C4.2W
PDMaximum Power Dissipation@TATA=70°C2.7W
EASAvalanche Energy, Single Pulsed156mJ
Electrical Characteristics
BVDSSDrain-Source Breakdown VoltageVGS=0V, IDS=250μA30V
IDSSZero Gate Voltage Drain CurrentVDS=30V, VGS=0V1μA
IDSSZero Gate Voltage Drain CurrentTJ=125°C30μA
VGS(th)Gate Threshold VoltageVDS=VGS, IDS=250μA1.0 - 2.5V
IGSSGate Leakage CurrentVGS=±20V, VDS=0V±100nA
RDS(ON)Drain-Source On-state ResistanceVGS=4.5V, IDS=35A3.4 - 4.5
RDS(ON)Drain-Source On-state ResistanceVGS=10V, IDS=50A2.8 - 3.5
Diode Characteristics
VSDDiode Forward VoltageISD=50A, VGS=0V1.2V
trrReverse Recovery TimeISD=50A, dlSD/dt=100A/μs30ns
QrrReverse Recovery ChargeISD=50A, dlSD/dt=100A/μs36nC
Dynamic Characteristics
RGGate ResistanceVGS=0V,VDS=0V,F=1MHz1.3Ω
CissInput CapacitanceVGS=0V, VDS=15V, Frequency=1.0MHz3280pF
CossOutput CapacitanceVGS=0V, VDS=15V, Frequency=1.0MHz580pF
CrssReverse Transfer CapacitanceVGS=0V, VDS=15V, Frequency=1.0MHz290pF
td(ON)Turn-on Delay TimeVDD=15V,IDS=20A, VGEN=10V,RG=4.7Ω8ns
trTurn-on Rise TimeVDD=15V,IDS=20A, VGEN=10V,RG=4.7Ω12ns
td(OFF)Turn-off Delay TimeVDD=15V,IDS=20A, VGEN=10V,RG=4.7Ω35ns
tfTurn-off Fall TimeVDD=15V,IDS=20A, VGEN=10V,RG=4.7Ω9ns
Gate Charge Characteristics
QgTotal Gate ChargeVDS=24V, VGS=10V, IDS=20A60nC
QgsGate-Source ChargeVDS=24V, VGS=10V, IDS=20A15nC
QgdGate-Drain ChargeVDS=24V, VGS=10V, IDS=20A22nC
Thermal Resistance
RθJCThermal Resistance-Junction to Case2.3°C/W
RθJAThermal Resistance-Junction to Ambient30°C/W
Ordering and Marking Information
Device MarkingRU3091M
PackagePDFN5060
PackagingTape&Reel
Quantity3000
Reel Size13''
Tape width12mm

2410122015_Shenzhen-ruichips-Semicon-RU3091M_C180950.pdf

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