Power Management 30V P Channel MOSFET Siliup SP30P08NJ with Fast Switching and Avalanche Energy Testing
Key Attributes
Model Number:
SP30P08NJ
Product Custom Attributes
Pd - Power Dissipation:
35W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5mΩ@10V;11mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 P-Channel
Output Capacitance(Coss):
410pF
Input Capacitance(Ciss):
2.9nF
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
SP30P08NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description
Product Overview
The SP30P08NJ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for applications requiring fast switching speeds and low on-resistance, this MOSFET features 100% single pulse avalanche energy testing. It is suitable for DC-DC converters and power management applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30P08NJ
- Technology: P-Channel MOSFET
- Package: PDFN3X3-8L
- Device Code: 30P08
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| On-Resistance | RDS(on)TYP | @-10V | 7.5 | m | ||
| On-Resistance | RDS(on)TYP | @-4.5V | 11 | m | ||
| Continuous Drain Current | ID | -40 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25, unless otherwise noted) | -30 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | -40 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | -26 | A | ||
| Pulse Drain Current Tested | IDM | -160 | A | |||
| Single Pulse Avalanche Energy | EAS | 121 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 35 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.6 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-20A | 7.5 | 10 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-10A | 11 | 15 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 2900 | pF | ||
| Output Capacitance | Coss | 410 | ||||
| Reverse Transfer Capacitance | Crss | 280 | ||||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-10A | 48 | nC | ||
| Gate-Source Charge | Qgs | 12 | ||||
| Gate-Drain Charge | Qg d | 14 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V,VGS=-10V,RG=3, ID=-10A | 15 | nS | ||
| Rise Time | Tr | 11 | ||||
| Turn-Off Delay Time | Td(off) | 44 | ||||
| Fall Time | Tf | 21 | ||||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -40 | A | |||
| Reverse recover time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | 43 | nS | ||
| Reverse recovery charge | Qrr | 25 | nC | |||
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0 - 0.05 | 0 - 0.002 | ||||
| D | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| D1 | 2.300 - 2.600 | 0.091 - 0.102 | ||||
| E | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | ||||
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| e | 0.550 - 0.750 | 0.022 - 0.030 | ||||
| L | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | ||||
| L2 | 0 - 0.100 | 0 - 0.004 | ||||
| L3 | 0 - 0.100 | 0 - 0.004 | ||||
| H | 0.315 - 0.515 | 0.012 - 0.020 | ||||
| 9 - 13 | 9 - 13 | |||||
2504101957_Siliup-SP30P08NJ_C41355014.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
