High Current 20V N Channel MOSFET Siliup SP2002KNC with Low Static Drain Source On Resistance Rating
Key Attributes
Model Number:
SP2002KNC
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
250mΩ@4.5V;350mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
19pF
Pd - Power Dissipation:
150mW
Input Capacitance(Ciss):
35pF
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
SP2002KNC
Package:
PDFN1006-3L
Product Description
Product Overview
The SP2002KNC is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, it features a surface mount package and ESD protection up to 2KV. This MOSFET is suitable for applications such as battery switches and DC/DC converters, offering robust performance in a compact DFN1006-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP2002KNC
- Technology: N-Channel MOSFET
- Package Type: DFN1006-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | - | - | 20 | - | V |
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | - | 250 | 380 | m |
| Static Drain-Source On-Resistance | RDS(on) | @2.5V | - | 350 | 450 | m |
| Continuous Drain Current | ID | - | - | 0.75 | - | A |
| Pulse Drain Current | IDM | Tested | - | 3 | - | A |
| Power Dissipation | PD | - | - | - | 150 | mW |
| Thermal Resistance Junction-to-Ambient | RJA | - | - | - | 833 | C/W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | C |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | C |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.30 | 0.65 | 1.00 | V |
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 35 | - | pF |
| Output Capacitance | Coss | - | - | 19 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 9 | - | pF |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=500mA | - | 0.8 | - | nC |
| Gate-Source Charge | Qgs | - | - | 0.3 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 0.16 | - | nC |
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=10 , ID=500mA | - | 4 | - | nS |
| Turn-On Rise Time | tr | - | - | 19 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | 10 | - | nS |
| Turn-Off Fall Time | tf | - | - | 21 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information | Symbol | Dimensions In Millimeters | ||
|---|---|---|---|---|
| - | Min. | Typ. | Max. | |
| - | A | 0.47 | 0.50 | 0.55 |
| - | A1 | 0.00 | - | 0.05 |
| - | b | 0.10 | 0.15 | 0.20 |
| - | b2 | 0.45 | 0.50 | 0.55 |
| - | D | 0.95 | 1.0 | 1.05 |
| - | E | 0.55 | 0.60 | 0.65 |
| - | e | - | 0.35BSC | - |
| - | L1 | 0.20 | 0.25 | 0.30 |
| - | L2 | 0.20 | 0.25 | 0.30 |
| - | L3 | - | 0.40 | - |
| - | z | 0.02 | 0.05 | 0.08 |
2504101957_Siliup-SP2002KNC_C41354895.pdf
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