100V N Channel Power MOSFET Siliup SP010N02BGHTF with Split Gate Trench Technology and Fast Switching
Key Attributes
Model Number:
SP010N02BGHTF
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
235A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Input Capacitance(Ciss):
10.256nF
Output Capacitance(Coss):
1.876nF
Pd - Power Dissipation:
280W
Gate Charge(Qg):
158nC@10V
Mfr. Part #:
SP010N02BGHTF
Package:
TO-247
Product Description
Product Overview
The SP010N02BGHTF is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N02BGH
- Technology: Advanced Split Gate Trench Technology
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit | ||
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 100 | V | ||||
| RDS(on)TYP | @10V | 2 | m | |||
| ID | 235 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 235 | A | |||
| Continuous Drain Current (Tc=100) | ID | 160 | A | |||
| Pulsed Drain Current | IDM | 940 | A | |||
| Single Pulse Avalanche Energy | EAS | 1458 | mJ | |||
| Power Dissipation (Tc=25) | PD | 280 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.45 | /W | |||
| Storage Temperature Range | TSTG | -55 to 150 | ||||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | V | ||
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | 1 | A | |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.7 | 3.2 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - | 2 | 2.6 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 10256 | - | pF |
| Output Capacitance | Coss | - | 1876 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 35 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | - | 158 | - | nC |
| Gate-Source Charge | Qgs | - | 51 | - | nC | |
| Gate-Drain Charge | Qgd | - | 27 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=1.6, ID=125A | - | 35 | - | nS |
| Rise Time | tr | - | 68 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 150 | - | nS | |
| Fall Time | tf | - | 105 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 235 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 86 | - | nS |
| Reverse Recovery Charge | Qrr | - | 256 | - | nC | |
| TO-247 Package Information (Dimensions in Millimeters) | ||||||
| Symbol | Min. | Max. | Symbol | Min. | Max. | |
| A | 4.850 | 5.150 | A1 | 2.200 | 2.600 | |
| b | 1.000 | 1.400 | b1 | 2.800 | 3.200 | |
| b2 | 1.800 | 2.200 | c | 0.500 | 0.700 | |
| c1 | 1.900 | 2.100 | D | 15.450 | 15.750 | |
| E1 | 3.500 REF. | E2 | 3.600 REF. | |||
| L | 40.900 | 41.300 | L1 | 24.800 | 25.100 | |
| L2 | 20.300 | 20.600 | 7.100 | 7.300 | ||
| e | 5.450 TYP. | H | 5.980 REF. | |||
| h | 0.000 | 0.300 | ||||
2504101957_Siliup-SP010N02BGHTF_C22385382.pdf
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