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quality N Channel MOSFET Siliup SP30N22T1 Featuring 30 Volt Drain Source Voltage and Low On Resistance factory
quality N Channel MOSFET Siliup SP30N22T1 Featuring 30 Volt Drain Source Voltage and Low On Resistance factory
quality N Channel MOSFET Siliup SP30N22T1 Featuring 30 Volt Drain Source Voltage and Low On Resistance factory
quality N Channel MOSFET Siliup SP30N22T1 Featuring 30 Volt Drain Source Voltage and Low On Resistance factory

N Channel MOSFET Siliup SP30N22T1 Featuring 30 Volt Drain Source Voltage and Low On Resistance

Key Attributes
Model Number: SP30N22T1
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
RDS(on):
22mΩ@10V
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
51pF
Number:
1 N-channel
Pd - Power Dissipation:
1W
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
812pF
Gate Charge(Qg):
9.1nC@10V
Mfr. Part #:
SP30N22T1
Package:
SOT-23-3L
Product Description

Product Overview

The SP30N22T1 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed with TrenchFET technology for excellent RDS(on) and low gate charge. It is suitable for applications such as DC/DC converters, load switches for portable devices, and battery switches. This MOSFET offers a continuous drain current of 6A and features low on-resistance at various gate-source voltages.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP30N22T1
  • Device Code: 30N22
  • Technology: TrenchFET Power MOSFET
  • Channel Type: N-Channel

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 30 V
RDS(on) @10V 22 m
@4.5V 25 m
@2.5V 35 m
Continuous Drain Current ID 6 A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current ID 6 A
Pulsed Drain Current IDM 1) 24 A
Power Dissipation PD 1 W
Thermal Resistance from Junction to Ambient RJA 2) 125 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 ~ +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 30 V
Zero gate voltage drain current IDSS VDS =24V,VGS = 0V 1 A
Gate-body leakage current IGSS VGS =12V, VDS = 0V 0.1 A
Gate threshold voltage VGS(th) VDS =VGS, ID =250A 0.7 0.9 1.4 V
Drain-source on-resistance RDS(on) 3) VGS =10V, ID =6A 22 28 m
3) VGS =4.5V, ID =5A 25 35 m
3) VGS =2.5V, ID =4A 35 50 m
Dynamic Characteristics 4)
Input Capacitance Ciss VDS =15V,VGS =0V,f =1MHz 812 pF
Output Capacitance Coss 75 pF
Reverse Transfer Capacitance Crss 51 pF
Total Gate Charge Qg VGS = 10V,VDS = 15V, ID=6A 9.1 nC
Gate-Source Charge Qgs 1.8 -
Gate-Drain Charge Qg 2.1 -
Switching Characteristics 4)
Turn-on delay time td(on) VGS=10V,VDS=15V, RL=3,ID=5A 9.2 ns
Turn-on rise time tr 4.2 ns
Turn-off delay time td(off) 48.1 ns
Turn-off fall time tf 6.3 ns
Source-Drain Diode Characteristics
Diode Forward voltage VSD 3) VGS =0V, IS=1A 1.2 V
Package Information
Package Type SOT-23-3L
Dimensions (mm) A 1.050 1.250
A1 0.000 0.100
A2 1.050 1.150
b 0.300 0.500
c 0.100 0.200
D 2.820 3.020
E1 1.500 1.700
E 2.650 2.950
e (Typ.) 0.950
e1 1.800 2.000
L 0.300 0.600
0 8

2506271720_Siliup-SP30N22T1_C49258032.pdf

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