epitaxial planar switching diode ROHM DAN217UT106 ideal for general electronic equipment applications
Key Attributes
Model Number:
DAN217UT106
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
200nA@70V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
80V
Diode Configuration:
1 Pair Series Connection
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
DAN217UT106
Package:
SOT-323
Product Description
DAN217U Switching Diode
High-speed switching diode with high reliability, suitable for general electronic equipment applications. Features epitaxial planar structure.
Product Attributes
- Brand: ROHM
- Structure: Epitaxial planar
- Taping Code: T106
- Marking: A7
- Packaging: Embossed Tape Reel
- Reel Size: 180 mm
- Taping Width: 8 mm
- Basic Ordering Unit: 3000 pcs
- Note: Not Recommended for New Designs
Technical Specifications
| Parameter | Symbol | Conditions | Limits | Unit |
| Reverse voltage | VR | -80 | V | |
| Repetitive peak reverse voltage | VRM | -80 | V | |
| Average rectified forward current | Io | 100 | mA | |
| Forward current | IFM | 300 | mA | |
| Peak forward surge current | IFSM | t=1s | 4000 | mA |
| Power dissipation | PD | * 2 elements total | 200 | mW |
| Junction temperature | Tj | 150 | ||
| Storage temperature | Tstg | -55 150 | ||
| Forward voltage | VF | IF=100mA | - | 1.2 V |
| Reverse current | IR | VR=70V | - | 0.2 A |
| Capacitance between terminals | Ct | VR=6.0V f=1.0MHz | - | 3.5 pF |
| Reverse recovery time | trr | VR=6.0V IF=5.0mA RL=50 | - | 4.0 ns |
*Capacitance: b/w 1pin and 2pin
1809172049_ROHM-DAN217UT106_C253309.pdf
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