20V Drain Source Voltage N-Channel MOSFET Siliup SP2102BT3 in SOT-323 Package for Power Conversion
Key Attributes
Model Number:
SP2102BT3
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
RDS(on):
50mΩ@4.5V;55mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
300pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
SP2102BT3
Package:
SOT-323
Product Description
Product Overview
The SP2102BT3 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. This device offers high power and current handling capabilities, making it suitable for applications such as battery switches and DC/DC converters. It is available in a compact SOT-323 surface mount package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co., Ltd.
- Product Code: SP2102BT3
- Channel Type: N-Channel
- Package Type: SOT-323
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 20 | V | |||
| On-Resistance (Typical) | RDS(on) | @4.5V | 50 | m | ||
| On-Resistance (Typical) | RDS(on) | @2.5V | 55 | m | ||
| Continuous Drain Current | ID | 2 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | 20 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 10 | V | ||
| Continuous Drain Current | ID | (Ta=25) | 2 | A | ||
| Pulse Drain Current | IDM | (Tested) | 8 | A | ||
| Power Dissipation | PD | (Ta=25) | 300 | mW | ||
| Thermal Resistance (Junction-to-Ambient) | RJA | 416 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.5 | 0.7 | 1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=2.9A | - | 50 | 65 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID=2.5A | - | 55 | 80 | m |
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 300 | - | pF |
| Output Capacitance | Coss | VDS=10V , VGS=0V , f=1MHz | - | 120 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=10V , VGS=0V , f=1MHz | - | 80 | - | pF |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=3.6A | - | 4.0 | - | nC |
| Gate-Source Charge | Qgs | VDS=10V , VGS=4.5V , ID=3.6A | - | 0.65 | - | nC |
| Gate-Drain Charge | Qgd | VDS=10V , VGS=4.5V , ID=3.6A | - | 1.5 | - | nC |
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=6 , ID=3.6A | - | 7 | - | nS |
| Turn-On Rise Time | tr | VDD=10V VGS=4.5V , RG=6 , ID=3.6A | - | 55 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=10V VGS=4.5V , RG=6 , ID=3.6A | - | 16 | - | nS |
| Turn-Off Fall Time | tf | VDD=10V VGS=4.5V , RG=6 , ID=3.6A | - | 10 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| SOT-323 Package Information (Dimensions in Millimeters) | ||||||
| Dimension | Symbol | Min. | Max. | Inches Min. | Inches Max. | |
| A | 0.900 | 1.100 | 0.035 | 0.043 | ||
| A1 | 0.000 | 0.100 | 0.000 | 0.004 | ||
| A2 | 0.900 | 1.000 | 0.035 | 0.039 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| c | 0.080 | 0.150 | 0.003 | 0.006 | ||
| D | 2.000 | 2.200 | 0.079 | 0.087 | ||
| E | 1.150 | 1.350 | 0.045 | 0.053 | ||
| E1 | 2.000 | 2.450 | 0.085 | 0.096 | ||
| e | 0.650 TYP. | 0.026 TYP. | ||||
| e1 | 1.200 | 1.400 | 0.047 | 0.055 | ||
| L | 0.525 REF. | 0.021 REF. | ||||
| L1 | 0.260 | 0.460 | 0.010 | 0.018 | ||
| 0 | 8 | 0 | 8 | |||
2504101957_Siliup-SP2102BT3_C41355153.pdf
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