Fast Switching MOSFET Siliup SP47M65TF 650V with Low Gate Charge and 47A Continuous Drain Current in TO247 Package

Key Attributes
Model Number: SP47M65TF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
47A
RDS(on):
60mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
3.08nF
Pd - Power Dissipation:
391W
Gate Charge(Qg):
194nC@10V
Mfr. Part #:
SP47M65TF
Package:
TO-247
Product Description

Product Overview

The SP47M65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for fast switching applications. It features low gate charge and low RDS(on), with a continuous drain current of 47A at 25. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management systems. It comes in a TO-247 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 47M65
  • Package: TO-247 (Pinout: 1:G, 2:D, 3:S)
  • Circuit Diagram Marking: 47M65 :Device Code, ** :Week Code
  • Origin: China (implied by www.siliup.com and company name)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 650 V
RDS(on) RDS(on) 10V 60 m
Continuous Drain Current ID 47 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS 30 V
Continuous Drain Current (Tc=25) ID 47 A
Continuous Drain Current (Tc=100) ID 29 A
Pulsed Drain Current IDM 188 A
Single Pulse Avalanche Energy1 EAS 1160 mJ
Power Dissipation (Tc=25) PD 391 W
Thermal Resistance Junction-to-Case RJC 0.32 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 650 - - V
Drain-Source Leakage Current IDSS VDS = 520V, VGS = 0V - - 1 uA
Gate-Source Leakage Current IGSS VGS = 30V, VDS = 0V - - 0.1 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3 4 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 23A - 60 70 m
Dynamic Characteristics
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 3080 - pF
Output Capacitance Coss - 140 - pF
Reverse Transfer Capacitance Crss - 7 - pF
Total Gate Charge Qg VDS=480V , VGS=10V , ID=23A - 194 - nC
Gate-Source Charge Qgs - 35 -
Gate-Drain Charge Qgd - 90 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=480V, VGS=10V , RG=2, ID=10A - 22 - nS
Rise Time tr - 10 -
Turn-Off Delay Time td(off) - 90 -
Fall Time tf - 5 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 47 A
Reverse recover time trr IS=23A, di/dt=100A/us, TJ=25 - 710 - nS
Reverse recovery charge Qrr - 19 - uC
Package Information (TO-247)
Symbol Dimensions In Millimeters (Min./Max.) Dimensions In Inches (Min./Max.)
A 4.850 / 5.150 0.191 / 0.200
A1 2.200 / 2.600 0.087 / 0.102
b2 1.800 / 2.200 0.071 / 0.087
b 1.000 / 1.400 0.039 / 0.055
b1 2.800 / 3.200 0.110 / 0.126
c 0.500 / 0.700 0.020 / 0.028
c1 1.900 / 2.100 0.075 / 0.083
D 15.450 / 15.750 0.608 / 0.620
E1 3.500 (REF.) 0.138 (REF.)
E2 3.600 (REF.) 0.142 (REF.)
L 40.900 / 41.300 1.610 / 1.626
L1 24.800 / 25.100 0.976 / 0.988
L2 20.300 / 20.600 0.799 / 0.811
7.100 / 7.300 0.280 / 0.287
e 5.450 (TYP.) 0.215 (TYP.)
H1 5.980 (REF.) 0.235 (REF.)
h 0.000 / 0.300 0.000 / 0.012

2504101957_Siliup-SP47M65TF_C22466838.pdf
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