Fast Switching MOSFET Siliup SP47M65TF 650V with Low Gate Charge and 47A Continuous Drain Current in TO247 Package
Product Overview
The SP47M65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for fast switching applications. It features low gate charge and low RDS(on), with a continuous drain current of 47A at 25. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management systems. It comes in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 47M65
- Package: TO-247 (Pinout: 1:G, 2:D, 3:S)
- Circuit Diagram Marking: 47M65 :Device Code, ** :Week Code
- Origin: China (implied by www.siliup.com and company name)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 650 | V | |||
| RDS(on) | RDS(on) | 10V | 60 | m | ||
| Continuous Drain Current | ID | 47 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current (Tc=25) | ID | 47 | A | |||
| Continuous Drain Current (Tc=100) | ID | 29 | A | |||
| Pulsed Drain Current | IDM | 188 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 1160 | mJ | |||
| Power Dissipation (Tc=25) | PD | 391 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.32 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 650 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS = 520V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 23A | - | 60 | 70 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 3080 | - | pF |
| Output Capacitance | Coss | - | 140 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 7 | - | pF | |
| Total Gate Charge | Qg | VDS=480V , VGS=10V , ID=23A | - | 194 | - | nC |
| Gate-Source Charge | Qgs | - | 35 | - | ||
| Gate-Drain Charge | Qgd | - | 90 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=480V, VGS=10V , RG=2, ID=10A | - | 22 | - | nS |
| Rise Time | tr | - | 10 | - | ||
| Turn-Off Delay Time | td(off) | - | 90 | - | ||
| Fall Time | tf | - | 5 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 47 | A | |
| Reverse recover time | trr | IS=23A, di/dt=100A/us, TJ=25 | - | 710 | - | nS |
| Reverse recovery charge | Qrr | - | 19 | - | uC | |
| Package Information (TO-247) | ||||||
| Symbol | Dimensions In Millimeters (Min./Max.) | Dimensions In Inches (Min./Max.) | ||||
| A | 4.850 / 5.150 | 0.191 / 0.200 | ||||
| A1 | 2.200 / 2.600 | 0.087 / 0.102 | ||||
| b2 | 1.800 / 2.200 | 0.071 / 0.087 | ||||
| b | 1.000 / 1.400 | 0.039 / 0.055 | ||||
| b1 | 2.800 / 3.200 | 0.110 / 0.126 | ||||
| c | 0.500 / 0.700 | 0.020 / 0.028 | ||||
| c1 | 1.900 / 2.100 | 0.075 / 0.083 | ||||
| D | 15.450 / 15.750 | 0.608 / 0.620 | ||||
| E1 | 3.500 (REF.) | 0.138 (REF.) | ||||
| E2 | 3.600 (REF.) | 0.142 (REF.) | ||||
| L | 40.900 / 41.300 | 1.610 / 1.626 | ||||
| L1 | 24.800 / 25.100 | 0.976 / 0.988 | ||||
| L2 | 20.300 / 20.600 | 0.799 / 0.811 | ||||
| 7.100 / 7.300 | 0.280 / 0.287 | |||||
| e | 5.450 (TYP.) | 0.215 (TYP.) | ||||
| H1 | 5.980 (REF.) | 0.235 (REF.) | ||||
| h | 0.000 / 0.300 | 0.000 / 0.012 | ||||
2504101957_Siliup-SP47M65TF_C22466838.pdf
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