Power Management MOSFET Shenzhen ruichips Semicon RU6888M N Channel 60V 62A RoHS Compliant Device
Key Attributes
Model Number:
RU6888M
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
62A
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
110pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.45nF
Output Capacitance(Coss):
310pF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
RU6888M
Package:
PDFN-8(5.8x4.9)
Product Description
Product Overview
The RU6888M is an N-Channel Advanced Power MOSFET featuring a Super High Dense Cell Design for reliable and rugged performance. It offers 60V/62A capability with a low RDS(ON) of 7m(Typ.)@VGS=10V. This device is 100% avalanche tested and is available in Lead Free and Green Devices (RoHS Compliant) options. It is suitable for Power Management applications.
Product Attributes
- Brand: Ruichips Semiconductor
- Origin: CHINA
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Rating | Unit | Min. | Typ. | Max. | Test Condition |
| Common Ratings (TC=25C Unless Otherwise Noted) | |||||||
| VDSS | Drain-Source Voltage | 60 | V | ||||
| VGSS | Gate-Source Voltage | ±25 | V | ||||
| TJ | Maximum Junction Temperature | 150 | °C | ||||
| TSTG | Storage Temperature Range | -55 to 150 | °C | ||||
| IS | Diode Continuous Forward Current | 50¹ | A | TC=25°C | |||
| IDP | 300µs Pulse Drain Current Tested | 240² | A | TC=25°C | |||
| ID | Continuous Drain Current(VGS=10V) | 62¹ | A | TC=25°C | |||
| ID | Continuous Drain Current(VGS=10V) | 40 | A | TC=100°C | |||
| ID | Continuous Drain Current(VGS=10V) | 16³ | A | TA=25°C | |||
| ID | Continuous Drain Current(VGS=10V) | 13³ | A | TA=70°C | |||
| PD | Maximum Power Dissipation | 62.5 | W | TC=25°C | |||
| PD | Maximum Power Dissipation | 25 | W | TC=100°C | |||
| PD | Maximum Power Dissipation | 4.2³ | W | TA=25°C | |||
| PD | Maximum Power Dissipation | 2.7³ | W | TA=70°C | |||
| EAS | Avalanche Energy, Single Pulsed | 225 | mJ | &sup4; | |||
| Static Characteristics (TC=25°C Unless Otherwise Noted) | |||||||
| BVDSS | Drain-Source Breakdown Voltage | 60 | V | VGS=0V, IDS=250µA | |||
| IDSS | Zero Gate Voltage Drain Current | 1 | µA | VDS= 60V, VGS=0V | |||
| IDSS | Zero Gate Voltage Drain Current | 30 | µA | TJ=85°C | |||
| VGS(th) | Gate Threshold Voltage | 2 | 3 | 4 | V | VDS=VGS, IDS=250µA | |
| IGSS | Gate Leakage Current | ±100 | nA | VGS=±25V, VDS=0V | |||
| RDS(ON) | Drain-Source On-state Resistance | 7 | 8 | mΩ | &sup5; | VGS= 10V, IDS=40A | |
| Diode Characteristics | |||||||
| VSD | Diode Forward Voltage | 1.2 | V | &sup5; | ISD=40A, VGS=0V | ||
| trr | Reverse Recovery Time | 32 | ns | &sup6; | ISD=20A, dlSD/dt=100A/µs | ||
| Qrr | Reverse Recovery Charge | 40 | nC | &sup6; | ISD=20A, dlSD/dt=100A/µs | ||
| Dynamic Characteristics | |||||||
| RG | Gate Resistance | 1.4 | Ω | VGS=0V,VDS=0V,F=1MHz | |||
| Ciss | Input Capacitance | 3450 | pF | VGS=0V, VDS=30V, Frequency=1.0MHz | |||
| Coss | Output Capacitance | 310 | pF | ||||
| Crss | Reverse Transfer Capacitance | 110 | pF | ||||
| td(ON) | Turn-on Delay Time | 27 | ns | &sup6; | VDD=30V, RL=1.5Ω, IDS=20A, VGEN=10V, RG=3Ω | ||
| tr | Turn-on Rise Time | 32 | ns | &sup6; | |||
| td(OFF) | Turn-off Delay Time | 97 | ns | &sup6; | |||
| tf | Turn-off Fall Time | 67 | ns | &sup6; | |||
| Gate Charge Characteristics | |||||||
| Qg | Total Gate Charge | 75 | nC | &sup6; | VDS=48V, VGS=10V, IDS=20A | ||
| Qgs | Gate-Source Charge | 18 | nC | &sup6; | |||
| Qgd | Gate-Drain Charge | 23 | nC | &sup6; | |||
2410121257_Shenzhen-ruichips-Semicon-RU6888M_C180959.pdf
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