Lead free complementary MOSFET Siliup SP4606CP8 30V 6A drain current SOP 8L package for load switching
Key Attributes
Model Number:
SP4606CP8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V;30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF;112pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
62pF;116pF
Input Capacitance(Ciss):
416pF;850pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
5nC@4.5V;13nC@10V
Mfr. Part #:
SP4606CP8
Package:
SOP-8L
Product Description
Product Overview
The SP4606CP8 is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. This lead-free, surface-mount device is suitable for applications such as battery protection, load switching, and power management. It offers robust performance with a 100% single-pulse avalanche energy test.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Complementary MOSFET
- Lead Status: Lead-free
- Package: SOP-8L
- Certifications: Lead free product is acquired
- Device Code: 4606
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Value | P-Channel Conditions | P-Channel Value | Units | |
|---|---|---|---|---|---|---|---|
| Product Summary | |||||||
| Drain-Source Voltage | V(BR)DSS | 30V | -30V | ||||
| RDS(on) Typ | @10V | 18m | @-10V | 30m | |||
| RDS(on) Typ | @4.5V | 24m | @-4.5V | 45m | |||
| Continuous Drain Current | ID | 6A | -6A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | |||||||
| Drain-Source Voltage | VDS | 30 | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | 20 | V | |||
| Continuous Drain Current | ID | 6 | -6 | A | |||
| Pulsed Drain Current | IDM | 24 | -24 | A | |||
| Single Pulse Avalanche Energy | EAS | 10.5 | 24 | mJ | |||
| Power Dissipation | PD | 2 | W | ||||
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | /W | ||||
| Storage Temperature Range | TSTG | -55 to 150 | |||||
| Operating Junction Temperature Range | TJ | -55 to 150 | |||||
| N-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | |||
| Drain-Source Leakage Current | IDSS | VDS=24V, VGS=0V, TJ=25 | - | 1 | - | uA | |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | 100 | - | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1 | 1.5 | 2.2 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=1A | - | 18 | 30 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=1A | - | 24 | 42 | m | |
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | - | 416 | - | pF | |
| Output Capacitance | Coss | - | 62 | - | pF | ||
| Reverse Transfer Capacitance | Crss | - | 51 | - | pF | ||
| Total Gate Charge | Qg | VDS=20V, VGS=4.5V, ID=6A | - | 5 | - | nC | |
| Gate-Source Charge | Qgs | - | 1.11 | - | |||
| Gate-Drain Charge | Qgd | - | 2.61 | - | |||
| Turn-On Delay Time | Td(on) | VDD=12V, VGS=10V, RG=3, ID=6A | - | 7.7 | - | nS | |
| Rise Time | Tr | - | 46 | - | |||
| Turn-Off Delay Time | Td(off) | - | 11 | - | nS | ||
| Fall Time | Tf | - | 3.6 | - | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | 1.2 | - | V | |
| Maximum Body-Diode Continuous Current | IS | - | 6 | - | A | ||
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, TJ=25 | - | 18 | - | nS | |
| Reverse Recovery Charge | Qrr | - | 2 | - | nC | ||
| P-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | |||
| Drain-Source Leakage Current | IDSS | VDS=-24V, VGS=0V, TJ=25 | - | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =-250uA | -1 | -1.5 | -2.2 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-4.1A | - | 30 | 35 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-3A | - | 45 | 65 | m | |
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | - | 850 | - | pF | |
| Output Capacitance | Coss | - | 116 | - | pF | ||
| Reverse Transfer Capacitance | Crss | - | 112 | - | pF | ||
| Total Gate Charge | Qg | VDS=-15V, VGS=-10V, ID=-6.5A | - | 13 | - | nC | |
| Gate-Source Charge | Qgs | - | 2.6 | - | |||
| Gate-Drain Charge | Qgd | - | 2.2 | - | |||
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V, RG=3, ID=-4A | - | 7.5 | - | nS | |
| Rise Time | Tr | - | 5.5 | - | |||
| Turn-Off Delay Time | Td(off) | - | 19 | - | nS | ||
| Fall Time | Tf | - | 7 | - | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A, TJ=25 | - | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | - | -6 | A | |||
| Reverse Recovery Time | Trr | IS=-20A, di/dt=-100A/us, Tj=25 | - | 0.9 | nS | ||
| Reverse Recovery Charge | Qrr | - | 7 | nC | |||
| Package Information | |||||||
| Package Type | SOP-8L | ||||||
| Dimensions (mm) | A | 1.35 - 1.75 | A1 | 0.10 - 0.25 | |||
| Dimensions (mm) | A2 | 1.35 - 1.55 | b | 0.33 - 0.51 | |||
| Dimensions (mm) | c | 0.17 - 0.25 | D | 4.80 - 5.00 | |||
| Dimensions (mm) | e | 1.27 REF. | E | 5.80 - 6.20 | |||
| Dimensions (mm) | E1 | 3.80 - 4.00 | L | 0.40 - 1.27 | |||
| Dimensions (mm) | 0 - 8 | ||||||
| Order Information | Device | SP4606CP8 | Package | SOP-8L | |||
| Order Information | Unit/Tape | 4000 | |||||
2504101957_Siliup-SP4606CP8_C22385399.pdf
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