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quality 120V N Channel Power MOSFET with Low RDSon and Low Gate Charge Siliup SP012N03BGHTD in TO263 Package factory
quality 120V N Channel Power MOSFET with Low RDSon and Low Gate Charge Siliup SP012N03BGHTD in TO263 Package factory

120V N Channel Power MOSFET with Low RDSon and Low Gate Charge Siliup SP012N03BGHTD in TO263 Package

Key Attributes
Model Number: SP012N03BGHTD
Product Custom Attributes
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.64nF
Output Capacitance(Coss):
835pF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
SP012N03BGHTD
Package:
TO-263
Product Description

Product Overview

The SP012N03BGHTD is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high-speed power switching applications, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). Its features include low reverse transfer capacitances and 100% single pulse avalanche energy testing. Ideal for DC-DC converters and power management systems, it comes in a TO-263 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP012N03BGHTD
  • Channel Type: N-Channel
  • Package: TO-263
  • Device Code: 012N03BGH

Technical Specifications

Product Summary
V(BR)DSS RDS(on)TYP ID Features
120V 3.7m@10V 180A Fast Switching, Low Gate Charge and Rdson, Low Reverse transfer capacitances, 100% Single Pulse avalanche energy Test
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 120 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 180 A
Continuous Drain Current (Tc=100) ID 120 A
Pulsed Drain Current IDM 720 A
Single Pulse Avalanche Energy EAS 900 mJ
Power Dissipation (Tc=25) PD 230 W
Thermal Resistance Junction-to-Case RJC 0.54 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Characteristics Symbol Test Condition Typ Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 120 V
Drain Cut-Off Current IDSS VDS = 96V, VGS = 0V - 1 A
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - 0.1
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 3.0 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 50A 3.7 m
Dynamic Characteristics
Input Capacitance Ciss VDS = 60V, VGS = 0V, f = 1.0MHz 5640 pF
Output Capacitance Coss VDS = 60V, VGS = 0V, f = 1.0MHz 835 pF
Reverse Transfer Capacitance Crss VDS = 60V, VGS = 0V, f = 1.0MHz 13 pF
Total Gate Charge Qg VDS=60V , VGS=10V , ID=75A 152 nC
Gate-Source Charge Qgs VDS=60V , VGS=10V , ID=75A 43 nC
Gate-Drain Charge Qgd VDS=60V , VGS=10V , ID=75A 46 nC
Switching Characteristics
Turn-On Delay Time td(on) VGS = 10V, VDS = 50V, ID = 75A, RG = 1.6 25 nS
Rise Time tr VGS = 10V, VDS = 50V, ID = 75A, RG = 1.6 15 nS
Turn-Off Delay Time td(off) VGS = 10V, VDS = 50V, ID = 75A, RG = 1.6 52 nS
Fall Time tf VGS = 10V, VDS = 50V, ID = 75A, RG = 1.6 18 nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - 1.2 V
Maximum Body-Diode Continuous Current IS 180 A
Reverse Recovery Time Trr IS=100A, di/dt=100A/us, TJ=25 92 nS
Reverse Recovery Charge Qrr IS=100A, di/dt=100A/us, TJ=25 183 nC
TO-263 Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.470 4.670 0.176 0.184
A1 0.000 0.150 0.000 0.006
B 1.120 1.420 0.044 0.056
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
L 14.940 15.500 0.588 0.610
L1 4.950 5.450 0.195 0.215
L2 2.340 2.740 0.092 0.108
L3 1.300 1.700 0.051 0.067
0 8 0 8
V 5.600 REF. 0.220 REF.

2504101957_Siliup-SP012N03BGHTD_C22385369.pdf

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