Power Switching N Channel MOSFET with Low Gate Charge Siliup SP012N03BGHTP 120V TO 220R Package
Key Attributes
Model Number:
SP012N03BGHTP
Product Custom Attributes
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 N-channel
Output Capacitance(Coss):
835pF
Input Capacitance(Ciss):
5.64nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
SP012N03BGHTP
Package:
TO-220R
Product Description
Product Overview
The SP012N03BGHTP is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high-speed power switching applications, this MOSFET features fast switching characteristics, low gate charge, and low RDS(on). Its robust design makes it suitable for DC-DC converters and power management systems. The device is available in a TO-220R package and has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP012N03BGHTP
- Package: TO-220R
- Material: Silicon
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 120 | V | ||||
| RDS(on) | @10V | 3.7 | m | |||
| ID | 180 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 120 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 180 | A | |||
| Continuous Drain Current (Tc=100) | ID | 120 | A | |||
| Pulsed Drain Current | IDM | 720 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 900 | mJ | |||
| Power Dissipation (Tc=25) | PD | 230 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.54 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 120 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 96V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 50A | - | 3.7 | 4.6 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 60V, VGS = 0V, f = 1.0MHz | - | 5640 | - | pF |
| Output Capacitance | Coss | - | 835 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 13 | - | pF | |
| Total Gate Charge | Qg | VDS=60V , VGS=10V , ID=75A | - | 152 | - | nC |
| Gate-Source Charge | Qgs | - | 43 | - | ||
| Gate-Drain Charge | Qgd | - | 46 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 75A, RG = 1.6 | - | 25 | - | nS |
| Rise Time | tr | - | 15 | - | ||
| Turn-Off Delay Time | td(off) | - | 52 | - | ||
| Fall Time | tf | - | 18 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 180 | A | |
| Reverse Recovery Time | trr | IS=100A, di/dt=100A/us, TJ=25 | - | 92 | - | nS |
| Reverse Recovery Charge | Qrr | - | 183 | - | nC | |
Note: 1. The test condition is VDD=50V, VGS=10V, L=0.5mH, RG=25
Package Information
TO-220R Package Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.30 | 4.80 | 0.169 | 0.189 |
| A1 | 2.20 | 2.70 | 0.087 | 0.106 |
| b | 0.70 | 0.95 | 0.028 | 0.037 |
| b1 | 1.10 | 1.50 | 0.043 | 0.059 |
| c | 0.40 | 0.65 | 0.016 | 0.026 |
| c1 | 1.20 | 1.45 | 0.047 | 0.057 |
| D | 9.70 | 10.30 | 0.382 | 0.406 |
| D1 | 8.70 Ref. | 0.343 Ref. | ||
| E | 8.75 | 9.65 | 0.344 | 0.380 |
| E1 | 12.85 | 13.85 | 0.492 | 0.516 |
| E2 | 3.95 | 4.55 | 0.156 | 0.179 |
| E3 | 1.27 | 2.07 | 0.050 | 0.080 |
| e | 2.540 Typ. | 0.100 Typ. | ||
| e1 | 4.98 | 5.18 | 0.196 | 0.204 |
| F | 2.60 | 3.00 | 0.102 | 0.118 |
| H | 7.00 | 8.40 | 0.276 | 0.331 |
| L | 5.10 | 5.50 | 0.201 | 0.217 |
| L1 | 1.35 | 1.75 | 0.053 | 0.069 |
| L2 | 2.50 | 2.90 | 0.098 | 0.114 |
| L3 | 1.30 | 1.50 | 0.051 | 0.059 |
| V | 6.70 Ref. | 0.264 Ref. | ||
| V1 | 10.45 | 11.45 | 0.411 | 0.451 |
| 3.45 | 3.75 | 0.136 | 0.148 | |
| 1 | 90 | 93.5 | 90 | 93.5 |
| 2 | 0 | 6 | 0 | 6 |
| 3 | 4 | 10 | 4 | 10 |
| 4 | 4 | 10 | 4 | 10 |
| Ra | 0.40 | 0.90 | 0.016 | 0.035 |
| Rb | 0.30 | 0.70 | 0.012 | 0.027 |
2506271720_Siliup-SP012N03BGHTP_C49257237.pdf
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