P Channel MOSFET Siliup SP2006KDTW 20V Surface Mount Device Suitable for Battery Management Systems
Key Attributes
Model Number:
SP2006KDTW
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
2 P-Channel
Input Capacitance(Ciss):
113pF
Output Capacitance(Coss):
15pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
SP2006KDTW
Package:
SOT-363
Product Description
Product Overview
The SP2006KDTW is a 20V P-Channel MOSFET designed for surface mount applications. It features low RDS(on) and operates at low logic-level gate drive, with integrated ESD protection. This MOSFET is suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Device Code: 06K
- Package: SOT-363
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| On-Resistance | RDS(on) | -4.5V | 0.65 | |||
| On-Resistance | RDS(on) | -2.5V | 0.85 | |||
| Continuous Drain Current | ID | -0.66 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | -0.66 | A | |||
| Pulsed Drain Current | IDM | -1.2 | A | |||
| Power Dissipation | PD | 0.15 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-16V,VGS = 0V | -1 | A | ||
| Gate-body leakage current | IGSS | VGS = 10VVDS =0V | 10 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.35 | -0.65 | -1 | V |
| Drain-source on-resistance | RDS(on) | VGS = -4.5V, ID = -0.5A | 0.65 | 0.75 | ||
| Drain-source on-resistance | RDS(on) | VGS = -2.5V, ID = -0.2A | 0.85 | 1.0 | ||
| Drain-source on-resistance | RDS(on) | VGS = -1.8V, ID = -0.1A | 1.2 | |||
| Input Capacitance | Ciss | VDS =-16V,VGS =0V,f =1MHz | 113 | pF | ||
| Output Capacitance | Coss | VDS =-16V,VGS =0V,f =1MHz | 15 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =-16V,VGS =0V,f =1MHz | 9 | pF | ||
| Turn-on delay time | td(on) | VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 | 9 | ns | ||
| Turn-on rise time | tr | VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 | 5.7 | ns | ||
| Turn-off delay time | td(off) | VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 | 32.6 | ns | ||
| Turn-off fall time | tf | VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 | 20.3 | ns | ||
| Diode Forward voltage | VSD | VGS =0V, IS=-0.5 A | -1.2 | V | ||
| Package Information (SOT-363) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.00 | ||||
| A1 | 0.00 | 0.10 | ||||
| B | 0.10 | 0.30 | ||||
| b1 | 1.30 | |||||
| D | 1.80 | 2.20 | ||||
| E | 2.00 | 2.20 | ||||
| E1 | 1.15 | 1.35 | ||||
| e | 0.65 (TYP.) | |||||
| L | 0.10 | 0.25 | ||||
| L1 | 0.15 | 0.4 | ||||
2411192315_Siliup-SP2006KDTW_C41355137.pdf
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