1200V Silicon Carbide Power MOSFET Sichainsemi SG2M040120JH Low Reverse Recovery Low On Resistance Device
Key Attributes
Model Number:
SG2M040120JH
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
73A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.8pF
Input Capacitance(Ciss):
2.171nF
Pd - Power Dissipation:
365W
Gate Charge(Qg):
64nC
Mfr. Part #:
SG2M040120JH
Package:
TO-263-7L
Product Description
Product Overview
The SG2M040120JH is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt. This MOSFET features a high blocking voltage with low on-resistance and a fast intrinsic diode with low reverse recovery. Its performance characteristics lead to reduced cooling efforts, improved efficiency, increased power density, and the ability to operate at higher system switching frequencies. Key applications include on-board chargers, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies.
Product Attributes
- Brand: (Sichain Semiconductor)
- Material: Silicon Carbide (SiC)
- Package Type: TO-263-7L
- Compliance: Halogen free, RoHS compliant
- Certifications: RoHS
Technical Specifications
| Type | VDS (Max) | IDS (TC = 25) | RDS(on), typ (VGS = 15V, ID = 32A, TJ = 25) | TJ,max | Marking | Package |
|---|---|---|---|---|---|---|
| SG2M040120JH | 1200V | 73A | 40m | 175 | SG2M040120JH | TO-263-7L |
Key Performance Parameters
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 /+19 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 /+15 | V | Recommended operational values | |
| ID | Continuous drain current | 73 | A | VGS = 15V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 52 | A | VGS = 15V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 146 | A | Pulse width tP limited by TJ,max | Fig.22 |
| PD | Power dissipation | 365 | W | TC= 25C,TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| Rth(j-c) | Thermal resistance from junction to case | 0.33 | C/W | Fig.21 | |
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 | V | VDS = VGS, ID = 9mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.8 | V | VDS = VGS, ID = 9mA TJ = 175C | |
| VGS(th) | Gate threshold voltage | 3.6 | V | VDS = VGS, ID = 9mA | |
| IDSS | Zero gate voltage drain current | 1 | A | VDS = 1200V, VGS = 0V | |
| IGSS | Gate source leakage current | 100 | nA | VGS = 15V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 40 | m | VGS = 15V, ID = 32A | Fig.4,5, 6 |
| RDS(on) | Current drain-source on-state resistance | 68 | m | VGS = 15V, ID = 32A, TJ = 175C | |
| gfs | Transconductance | 22 | S | VDS = 20V, ID = 32A | Fig.7 |
| gfs | Transconductance | 20 | S | VDS = 20V, ID = 32A, TJ = 175C | |
| Ciss | Input capacitance | 2171 | pF | VDS = 1000V, VGS = 0V TJ = 25C, VAC = 25mV f = 100kHz | Fig.17, 18 |
| Coss | Output capacitance | 109 | pF | ||
| Crss | Reverse capacitance | 3.8 | pF | ||
| Eoss | Coss stored energy | 56 | J | Fig.16 | |
| Qgs | Gate source charge | 22 | nC | VDS = 800V, VGS = -4/+15V ID = 32A | Fig.12 |
| Qgd | Gate drain charge | 20 | nC | ||
| Qg | Gate charge | 64 | nC | ||
| Eon | Turn on switching energy | 261 | J | VDS = 800V, VGS = -4/+15V ID = 32A, Rg = 2.2 L = 100H | Fig.26 |
| Eoff | Turn off switching energy | 44 | J | ||
| tdon | Turn on delay time | 17 | ns | Fig.27 | |
| tr | Rise time | 6 | ns | ||
| tdoff | Turn off delay time | 18 | ns | ||
| tf | Fall time | 8 | ns | ||
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 16A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.3 | V | VGS = -4V, ISD = 16A TJ = 175C | |
| IS | Continuous diode forward current | 73 | A | VGS = -4V, Tc = 25C | Note2 |
| trr | Reverse recovery time | 23 | ns | VR = 800V, VGS = -4V ISD = 32A di/dt = 3276A/s TJ = 175C | |
| Qrr | Reverse recovery charge | 200 | nC | ||
| Irrm | Peak reverse recovery current | 20 | A |
Notes:
- Note 1: when using MOSFET Body Diode VGS,max = -4 / +19V
- Note 2: When using SiC Body Diode the maximum recommended VGS = -4V
2504101957_Sichainsemi-SG2M040120JH_C42456092.pdf
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