Power Switching 20V Dual N Channel MOSFET Siliup SP9926ADP8 with Low Gate Charge and Fast Switching
Key Attributes
Model Number:
SP9926ADP8
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7.6A
RDS(on):
17mΩ@4.5V;24mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
-
Output Capacitance(Coss):
155pF
Input Capacitance(Ciss):
800pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
SP9926ADP8
Package:
SOP-8
Product Description
Product Overview
The SP9926ADP8 is a 20V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard-switched and high-frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 9926
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 20V | |||||
| RDS(on)TYP | @4.5V | 17m | ||||
| RDS(on)TYP | @2.5V | 24m | ||||
| ID | 7.6A | |||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 7.6 | A | |||
| Pulsed Drain Current | IDM | 30.4 | A | |||
| Power Dissipation | PD | 2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 0.45 | 0.7 | 1.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=6A | - | 17 | 24 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=5A | - | 24 | 32 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | - | 800 | - | pF |
| Output Capacitance | Coss | - | 155 | - | ||
| Reverse Transfer Capacitance | Crss | - | 125 | - | ||
| Total Gate Charge | Qg | VDS=10V, VGS=4.5V, ID=3A | - | 11 | - | nC |
| Gate-Source Charge | Qgs | - | 2.3 | - | ||
| Gate-Drain Charge | Qg d | - | 2.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=10V, VGS=4.5V, RG=3, ID=3A | - | 5 | - | nS |
| Rise Time | Tr | - | 18 | - | ||
| Turn-Off Delay Time | Td(off) | - | 24 | - | ||
| Fall Time | Tf | - | 8 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 7.6 | A | |
| Reverse Recovery Time | Trr | IS=3A, di/dt=100A/us, TJ=25 | - | 7 | - | nS |
| Reverse Recovery Charge | Qrr | - | 2 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 (REF.) | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP9926ADP8 | SOP-8L | 4000 |
2504101957_Siliup-SP9926ADP8_C41355062.pdf
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