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quality Compact SOT523 packaged PNP transistor Siliup MMBT3906T5 suitable for general purpose switching operations factory
quality Compact SOT523 packaged PNP transistor Siliup MMBT3906T5 suitable for general purpose switching operations factory

Compact SOT523 packaged PNP transistor Siliup MMBT3906T5 suitable for general purpose switching operations

Key Attributes
Model Number: MMBT3906T5
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
DC Current Gain:
-
Transition Frequency(fT):
250MHz
Number:
1 PNP
Vce Saturation(VCE(sat)):
400mV@50mA,5mA
Type:
-
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3906T5
Package:
SOT-523
Product Description

Product Overview

The MMBT3906T5 is a general-purpose PNP silicon switching transistor designed for various applications. It features a collector-emitter voltage of -40V and a collector current of -0.2A, making it suitable for switching operations. This transistor is housed in a compact SOT-523 package.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Product Type: General Purpose Transistor
  • Material: Silicon
  • Polarity: PNP
  • Model: MMBT3906T5
  • Package: SOT-523

Technical Specifications

Parameter Symbol Test Condition Min Max Unit
Collector Base Voltage VCBO -40 V
Collector Emitter Voltage VCEO -40 V
Emitter Base Voltage VEBO -5 V
Collector Current IC -200 mA
Power Dissipation Ptot (Ta=25) 150 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 +150
Collector-base breakdown voltage BVCBO IC=-100A ,IE=0 -40 V
Collector-emitter breakdown voltage BVCEO IC=-100A , IB=0 -40 V
Emitter-base breakdown voltage BVEBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-30V, IE=0 -100 nA
Collector cut-off current ICEO VCE=-30V, IB=0 -50 nA
Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA
DC current gain hFE1 VCE=-1V, IC=-0.1mA 60
DC current gain hFE2 VCE=-1V, IC=-1mA 80
DC current gain hFE3 VCE=-1V, IC=-10mA 100 300
DC current gain hFE4 VCE=-1V, IC=-50mA 60
DC current gain hFE5 VCE=-1V, IC=-100mA 30
Collector-emitter saturation voltage VCE(sat) IC=-10mA, IB=-1mA -0.25 V
Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.4 V
Base-emitter saturation voltage VBE(sat) IC=-10mA, IB=-1mA -0.65 -0.85 V
Base-emitter saturation voltage VBE(sat) IC=-50mA, IB=-5mA -0.95 V
Transition frequency fT VCE= -20V, IC=-10mA,f=30MHz 250 MHZ
Symbol Dimensions In Millimeters Min Max
A 0.700 0.900
A1 0.000 0.100
A2 0.700 0.800
b1 0.150 0.250
b2 0.250 0.350
C 0.100 0.200
D 1.500 1.700
E 0.700 0.900
E1 1.450 1.750
e (TYP) 0.500
e1 0.900 1.100
L (REF) 0.400
L1 0.260 0.460
0 8

2411212332_Siliup-MMBT3906T5_C41355097.pdf

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