Low on resistance P channel MOSFET Siliup SP1216NQ suitable for power management and DC DC converters
Key Attributes
Model Number:
SP1216NQ
Product Custom Attributes
Pd - Power Dissipation:
3W
Drain To Source Voltage:
12V
Configuration:
-
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@4.5V;16mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
174pF
Number:
1 P-Channel
Output Capacitance(Coss):
204pF
Input Capacitance(Ciss):
1.515nF
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
SP1216NQ
Package:
PDFN-6L(2x2)
Product Description
Product Overview
The SP1216NQ is a 12V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance and low input capacitance, making it suitable for power management functions and DC-DC converters. This device is available in a PDFN2X2-6L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: Q1216
- Package: PDFN2X2-6L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -12 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @-4.5V | 13 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | @-2.5V | 16 | m | ||
| Continuous Drain Current | ID | -16 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -12 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | -16 | A | |||
| Pulsed Drain Current | IDM | -64 | A | |||
| Power Dissipation | PD | 3 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 41 | /W | |||
| Operating Junction Temperature Range | TSTG | -55 | ~ | +150 | ||
| Storage Temperature Range | TJ | -55 | ~ | +150 | ||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -12 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-9.6V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -0.4 | -0.7 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-10A | 13 | 18 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-2.5V, ID =-6.5A | 16 | 22 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-6V , VGS=0V , f=1MHz | 1515 | pF | ||
| Output Capacitance | Coss | 204 | pF | |||
| Reverse Transfer Capacitance | Crss | 174 | pF | |||
| Total Gate Charge | Qg | VDS=-6V , VGS=-4.5V , ID=-5A | 14 | nC | ||
| Gate-Source Charge | Qgs | 2.3 | nC | |||
| Gate-Drain Charge | Qg d | 3.6 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-6V VGS=-4.5V , RG=1, ID=-4A | 26 | nS | ||
| Rise Time | Tr | 24 | nS | |||
| Turn-Off Delay Time | Td(off) | 45 | nS | |||
| Fall Time | Tf | 20 | nS | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||
| Package Information (PDFN2X2-6L) | ||||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Typ. | Dimensions (mm) Max. | |||
| A | 0.70 | 0.75 | 0.80 | |||
| A1 | 0.02 | 0.05 | ||||
| b | 0.25 | 0.30 | 0.35 | |||
| b1 | 0.20REF | |||||
| c | 0.203REF | |||||
| D | 1.90 | 2.00 | 2.10 | |||
| D1 | 0.08 | 0.125 | 0.18 | |||
| D2 | 0.85 | 0.90 | 0.95 | |||
| D3 | 0.25 | 0.30 | 0.35 | |||
| D4 | 0.33 | 0.375 | 0.43 | |||
| e | 0.65BSC | |||||
| Nd | 1.30BSC | |||||
| E | 1.90 | 2.00 | 2.10 | |||
| E2 | 0.95 | 1.00 | 1.05 | |||
| E3 | 0.55 | 0.60 | 0.65 | |||
| L | 0.20 | 0.25 | 0.30 | |||
| h | 0.25REF | |||||
2504101957_Siliup-SP1216NQ_C41354995.pdf
Related Products
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
