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quality Surface Mount SOT 23 Package P Channel MOSFET Siliup SP2301T2 with Low On Resistance and High Current factory
quality Surface Mount SOT 23 Package P Channel MOSFET Siliup SP2301T2 with Low On Resistance and High Current factory

Surface Mount SOT 23 Package P Channel MOSFET Siliup SP2301T2 with Low On Resistance and High Current

Key Attributes
Model Number: SP2301T2
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@4.5V;80mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
78pF
Number:
1 P-Channel
Output Capacitance(Coss):
136pF
Input Capacitance(Ciss):
545pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
3.5nC@2.5V
Mfr. Part #:
SP2301T2
Package:
SOT-23
Product Description

Product Overview

The SP2301T2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It is suitable for surface mount applications and is commonly used in battery switches and DC/DC converters. This device offers a continuous drain current of -3A and features low on-resistance ratings at specified gate-source voltages.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: SP2301T2
  • Package Type: SOT-23
  • Circuit Diagram Marking: 2301

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
On-Resistance (Typical) RDS(on)TYP @-4.5V 60 m
On-Resistance (Typical) RDS(on)TYP @-2.5V 80 m
Continuous Drain Current ID -3 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID -3 A
Pulse Drain Current IDM Tested -12 A
Power Dissipation PD 1 W
Thermal Resistance Junction-to-Ambient RJA 125 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -20 V
Drain-Source Leakage Current IDSS VDS=-16V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -0.4 -0.7 -1.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-2A 60 75 m
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V , ID=-2A 80 110 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-8V , VGS=0V , f=1MHz 545 pF
Output Capacitance Coss 136 pF
Reverse Transfer Capacitance Crss 78 pF
Total Gate Charge
Total Gate Charge Qg VDS=-10V , VGS=-2.5V , ID=-3A 3.5 nC
Gate-Source Charge Qgs 0.8
Gate-Drain Charge Qg d 1.5
Switching Characteristics
Turn-On Delay Time td(on) VDD=-4V VGS=-4.5V , RG=6.2 , ID=-1A 6.6 nS
Turn-On Rise Time tr 18
Turn-Off Delay Time td(off) 24
Turn-Off Fall Time tf 16
Source-Drain Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
SOT-23 Package Information
Symbol Dimensions In Millimeters Min. Max.
A 0.90 1.15
A1 0.00 0.10
A2 0.90 1.05
b 0.30 0.50
c 0.08 0.15
D 2.80 3.00
E 1.20 1.40
E1 2.25 2.55
e 0.95 REF.
e1 1.80 2.00
L 0.55 REF.
L1 0.30 0.50

2504101957_Siliup-SP2301T2_C41354955.pdf

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