Power MOSFET Siliup SP60N01BGHNK 60V N Channel with 1.6m Typical RDSon and 120A Drain Current Rating
Key Attributes
Model Number:
SP60N01BGHNK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
120A
RDS(on):
1.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
58pF
Number:
1 N-channel
Output Capacitance(Coss):
1.398nF
Pd - Power Dissipation:
124W
Input Capacitance(Ciss):
6.97nF
Gate Charge(Qg):
104.8nC@10V
Mfr. Part #:
SP60N01BGHNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP60N01BGHNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Featuring advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is designed for power switching applications, PWM applications, and DC-DC converters, with a typical RDS(on) of 1.6m at 10V and a continuous drain current of 120A (package limit at 25C). It is available in a PDFN5X6-8L package and has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP60N01BGHNK
- Package: PDFN5X6-8L
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on)TYP | @10V | 1.6 | m | |||
| ID | 120 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | Silicon Limit | 180 | A | ||
| Continuous Drain Current (Tc=25C) | ID | Package Limit | 120 | A | ||
| Continuous Drain Current (Tc=100C) | ID | 80 | A | |||
| Pulse Drain Current Tested | IDM | 480 | A | |||
| Single pulsed avalanche energy1 | EAS | 676 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 124 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.0 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =50A | - | 1.6 | 2.1 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 6970 | - | pF |
| Output Capacitance | Coss | - | 1398 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 58 | - | pF | |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=50A | - | 104.8 | - | nC |
| Gate-Source Charge | Qgs | - | 38.8 | - | ||
| Gate-Drain Charge | Qgd | - | 14.4 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30 VGS=10V , RG=2.7, ID=50A | - | 25 | - | nS |
| Rise Time | tr | - | 63.9 | - | ||
| Turn-Off Delay Time | td(off) | - | 62.4 | - | ||
| Fall Time | tf | - | 28.2 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=50A , TJ=25 | - | - | 1.4 | V |
| Diode Continuous Current | IS | - | - | 120 | A | |
| Reverse recover time | trr | IS=20A, di/dt=100A/us, Tj=25 | - | 73 | - | nS |
| Reverse recovery charge | Qrr | - | 113.9 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | ||||
| E | 5.974 - 6.126 | 0.235 - 0.241 | ||||
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | ||||
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | ||||
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | ||||
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | ||||
| k | 1.190 - 1.390 | 0.047 - 0.055 | ||||
| b | 0.350 - 0.450 | 0.014 - 0.018 | ||||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | ||||
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | ||||
| H | 0.574 - 0.726 | 0.023 - 0.029 | ||||
| 10 - 12 | 10 - 12 | |||||
Note: 1. The EAS Test condition is VDD=30V, VGS =10V, L = 0.5mH, Rg=25
2506271720_Siliup-SP60N01BGHNK_C49257272.pdf
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