Power MOSFET Siliup SP60N10GDP8 60V N Channel with Low On Resistance and 12A Continuous Drain Current
Key Attributes
Model Number:
SP60N10GDP8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
12A
RDS(on):
10mΩ@10V;13mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
2 N-Channel
Output Capacitance(Coss):
310pF
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
1.35nF
Gate Charge(Qg):
27.9nC@10V
Mfr. Part #:
SP60N10GDP8
Package:
SOP-8L
Product Description
Product Overview
The SP60N10GDP8 is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features advanced Split Gate Trench Technology for fast switching and is designed for power management and switched-mode power supply applications. The device offers a low on-state resistance (RDS(on)) of 10m at 10V and 13m at 4.5V, with a continuous drain current (ID) of 12A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 60N10GD
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on)TYP | @10V | 10 | m | |||
| RDS(on)TYP | @4.5V | 13 | m | |||
| ID | 12 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25) | 12 | A | ||
| Continuous Drain Current | ID | (Ta=100C) | 8 | A | ||
| Pulse Drain Current | IDM | Tested | 48 | A | ||
| Single Pulse Avalanche Energy | EAS | 100 | mJ | |||
| Power Dissipation | PD | 2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | C/W | |||
| Storage Temperature Range | TJ | -55 | 150 | C | ||
| Operating Junction Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.6 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=6A | - | 10 | 13 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=4A | - | 13 | 18 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V,F=1MHz | - | 1350 | - | pF |
| Output Capacitance | Coss | - | 310 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 25 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=6A | - | 27.9 | - | nC |
| Gate-Source Charge | Qgs | - | 7.8 | - | ||
| Gate-Drain Charge | Qg d | - | 6.2 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=6A, VGS=10V, RG=4.7 | - | 14 | - | nS |
| Rise Time | tr | - | 26 | - | ||
| Turn-Off Delay Time | td(off) | - | 33.8 | - | ||
| Fall Time | tf | - | 26.4 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 12 | A | |
| Reverse Recovery Time | Trr | IS=10 A,di/dt=100 A/sTJ=25 | - | 23 | - | nS |
| Reverse Recovery Charge | Qrr | - | 36 | - | nC | |
| Package Information | ||||||
| Package Type | SOP-8L | |||||
| Dimensions (mm) | A | 1.35 | - | 1.75 | ||
| A1 | 0.10 | - | 0.25 | |||
| A2 | 1.35 | - | 1.55 | |||
| b | 0.33 | - | 0.51 | |||
| c | 0.17 | - | 0.25 | |||
| D | 4.80 | - | 5.00 | |||
| e | 1.27 | REF. | ||||
| E | 5.80 | - | 6.20 | |||
| E1 | 3.80 | - | 4.00 | |||
| L | 0.40 | - | 1.27 | |||
| 0 | - | 8 | ||||
2504101957_Siliup-SP60N10GDP8_C22466777.pdf
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