power management solution Shenzhen ruichips Semicon RU3401C P Channel MOSFET with low on resistance
Key Attributes
Model Number:
RU3401C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
RDS(on):
60mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 P-Channel
Output Capacitance(Coss):
95pF
Input Capacitance(Ciss):
640pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
RU3401C
Package:
SOT-23-3
Product Description
Product Overview
The RU3401C is a P-Channel Advanced Power MOSFET designed for various load switch and power management applications. It features a low on-resistance, super high dense cell design, and is reliable and rugged. This device is available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: Ruichips
- Origin: Shenzhen City, China
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
- Package: SOT23-3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit | |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=-250A | -30 | V | |||
| TJ=125C | -30 | V | |||||
| VDS=VGS, IDS=-250A | -1.2 | V | |||||
| Gate Threshold Voltage | VGS(th) | IDSS=-250A | -0.5 | -1.2 | V | ||
| Gate Leakage Current | IGSS | VGS=16V, VDS=0V | 100 | nA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | A | |||
| Drain-Source On-state Resistance | RDS(ON) | VGS=-10V, IDS=-5A | 40 | 45 | m | ||
| VGS=-4.5V, IDS=-4A | 45 | 60 | m | ||||
| VGS=-10V, IDS=-5A | 40 | m | |||||
| VGS=-4.5V, IDS=-4A | 45 | m | |||||
| Diode Forward Voltage | VSD | ISD=-1A, VGS=0V | -1.2 | V | |||
| Reverse Recovery Time | trr | ISD=-5A, dlSD/dt=100A/s | 17 | ns | |||
| Reverse Recovery Charge | Qrr | VGS=0V, VDS=0V, F=1MHz | 23 | nC | |||
| Gate Resistance | RG | 0.9 | |||||
| Capacitance | C | Ciss | VGS=0V, VDS=-15V, Frequency=1.0MHz | 640 | pF | ||
| Coss | 95 | pF | |||||
| Crss | 65 | pF | |||||
| Switching Characteristics | t | td(ON) | VDD=-15V, RL=3.8, IDS=-5A, VGEN=-4.5V, RG=6 | 50 | ns | ||
| tr | 16 | ns | |||||
| td(OFF) | 42 | ns | |||||
| tf | 21 | ns | |||||
| Gate Charge Characteristics | Q | Qg | VDS=-24V, VGS=-10V, IDS=-5A | 11 | nC | ||
| Qgs | 2 | nC | |||||
| Qgd | 3 | nC | |||||
| Maximum Power Dissipation | PD | Mounted on Large Heat Sink | 5 | W | |||
| Thermal Resistance-Junction to Case | RJC | 1.3 | C/W | ||||
| Thermal Resistance-Junction to Ambient | RJA | When mounted on 1 inch square copper board, t10sec. | 100 | C/W | |||
| Avalanche Energy, Single Pulsed | EAS | Limited by TJmax. Starting TJ = 25C. | 300 | mJ | |||
| Diode Continuous Forward Current | IS | TA=25C | -1 | A | |||
| Pulse Drain Current | IDP | TA=25C | -20 | A | |||
| Continuous Drain Current | ID | TA=25C, VGS=-10V | -5 | A | |||
| Continuous Drain Current | ID | TA=70C, VGS=-10V | -3.1 | A | |||
| Continuous Drain Current | ID | TA=25C, VGS=-4.5V | -1.3 | A | |||
| Continuous Drain Current | ID | TA=70C, VGS=-4.5V | -0.8 | A | |||
| Drain-Source Voltage | VDSS | -30 | V | ||||
| Gate-Source Voltage | VGSS | 16 | V | ||||
| Maximum Junction Temperature | TJ | 150 | C | ||||
| Storage Temperature Range | TSTG | -55 | 150 | C |
2409302204_Shenzhen-ruichips-Semicon-RU3401C_C2977199.pdf
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