40V P Channel Power MOSFET Siliup SP40P04AGHNK Featuring Split Gate Trench Technology Low Gate Charge and Fast Switching
Key Attributes
Model Number:
SP40P04AGHNK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
RDS(on):
4.7mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Number:
1 P-Channel
Reverse Transfer Capacitance (Crss@Vds):
39pF
Output Capacitance(Coss):
1.686nF
Input Capacitance(Ciss):
6.55nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
SP40P04AGHNK
Package:
PDFN5x6-8
Product Description
Product Overview
The SP40P04AGHNK is a 40V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management scenarios. It comes in a PDFN5x6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40P04AGHNK
- Technology: Advanced Split Gate Trench Technology
- Package: PDFN56-8L
- Device Code: 40P04AGH
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Product Summary | ||||||
| V(BR)DSS | -40 | V | ||||
| RDS(on)TYP | @-10V | 3.7 | m | |||
| ID | -120 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | -120 | A | |||
| Continuous Drain Current (Tc=100) | ID | -80 | A | |||
| Pulsed Drain Current | IDM | -480 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 950 | mJ | |||
| Power Dissipation (Tc=25) | PD | 150 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.83 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | VGS=0V , ID= -250uA | -40 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID = -250uA | -2 | -3 | -4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID= -20A | 3.7 | 4.7 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | 6550 | pF | ||
| Output Capacitance | Coss | 1686 | pF | |||
| Reverse Transfer Capacitance | Crss | 39 | pF | |||
| Total Gate Charge | Qg | VDS=-20V , VGS=10V , ID=-85A | 90 | nC | ||
| Gate-Source Charge | Qgs | 18 | ||||
| Gate-Drain Charge | Qgd | 12 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-20V , VGS=10V , RG=1.6,ID=-85A | 30 | nS | ||
| Rise Time | tr | 45 | ||||
| Turn-Off Delay Time | td(off) | 116 | ||||
| Fall Time | tf | 39 | ||||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -120 | A | |||
| Reverse Recovery Time | trr | IS=-20A, di/dt=100A/us, TJ=25 | 55 | nS | ||
| Reverse Recovery Charge | Qrr | 96 | nC | |||
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
Note: 1. The test condition is VDD=-20V, VGS=-10V, L=0.5mH, RG=25
Order Information:
| Device | Package | Unit/Tape |
| SP40P04AGHNK | PDFN5X6-8L | 5000 |
2504101957_Siliup-SP40P04AGHNK_C45351227.pdf
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