Shenzhen ruichips Semicon RU30120S N Channel MOSFET designed for power management and DC DC converters
Key Attributes
Model Number:
RU30120S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-
RDS(on):
9mΩ@4.5V,48A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
265pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.17nF
Output Capacitance(Coss):
480pF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
RU30120S
Package:
TO-263
Product Description
Product Overview
The RU30120S is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, designed for high-efficiency applications. It features a Super High Dense Cell Design, Ultra Low On-Resistance, and is 100% Avalanche Tested. This device is ideal for DC-DC converters and other power management applications requiring robust performance and reliability. Lead Free and Green Devices are available, complying with RoHS standards.
Product Attributes
- Brand: Ruichips Semiconductor Co., Ltd
- Origin: CHINA
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | VDSS | 30 | V | |||
| VGSS | ±20 | V | ||||
| TJ | 175 | °C | ||||
| Thermal Resistance | RθJC | 1 | °/W | |||
| RθJA | 62.5 | °/W | ||||
| Electrical Characteristics | BVDSS | VGS=0V, IDS=250µA | 30 | V | ||
| VGS(th) | VDS=VGS, IDS=250µA | 1 | 2 | 3 | V | |
| IDSS | VDS=30V, VGS=0V | 1 | µµA | |||
| IGSS | VGS=±20V, VDS=0V | ±100 | nA | |||
| RDS(ON) | VGS=10V, IDS=60A | 2.5 | 4 | mΩ | ||
| RDS(ON) | VGS=4.5V, IDS=48A | 3.3 | 6 | mΩ | ||
| Diode Characteristics | VSD | ISD=60A, VGS=0V | 1.2 | V | ||
| Diode Characteristics | trr | ISD=60A, dlSD/dt=100A/µs | 45 | ns | ||
| Diode Characteristics | Qrr | ISD=60A, dlSD/dt=100A/µs | 90 | nC | ||
| Dynamic Characteristics | Ciss | VGS=0V,VDS=15V, F=1.0MHz | 3170 | pF | ||
| Coss | VGS=0V,VDS=15V, F=1.0MHz | 480 | pF | |||
| Crss | VGS=0V,VDS=15V, F=1.0MHz | 265 | pF | |||
| RG | 1.8 | Ω | ||||
| Gate Charge Characteristics | td(ON) | VDD=15V, IDS=60A, VGEN=10V, RG=4.7Ω | 25 | ns | ||
| tr | VDD=15V, IDS=60A, VGEN=10V, RG=4.7Ω | 106 | ns | |||
| td(OFF) | VDD=15V, IDS=60A, VGEN=10V, RG=4.7Ω | 64 | ns | |||
| tf | VDD=15V, IDS=60A, VGEN=10V, RG=4.7Ω | 36 | ns | |||
| Gate Charge Characteristics | Qg | VDS=24V, VGS=10V, IDS=60A | 65 | nC | ||
| Gate Charge Characteristics | Qgs | VDS=24V, VGS=10V, IDS=60A | 15 | nC | ||
| Gate Charge Characteristics | Qgd | VDS=24V, VGS=10V, IDS=60A | 20 | nC | ||
| Avalanche Ratings | EAS | Limited by TJmax, IAS =35A, VDD = 24V, RG = 50Ω , Starting TJ = 25°C. | 306 | mJ | ||
| Continuous Drain Current | ID | TC=25°C | 120 | A | ||
| ID | TC=100°C | 100 | A | |||
| Pulsed Drain Current | IDP | TC=25°C | 480 | A | ||
| PD | TC=25°C | 150 | W |
2410122015_Shenzhen-ruichips-Semicon-RU30120S_C180966.pdf
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