Low Gate Charge 150V N Channel MOSFET Siliup SP015N16GHNK Designed for Power Switching and DC DC Converter

Key Attributes
Model Number: SP015N16GHNK
Product Custom Attributes
Drain To Source Voltage:
150V
Configuration:
-
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
153pF
Input Capacitance(Ciss):
1.869nF
Pd - Power Dissipation:
105W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
SP015N16GHNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP015N16GHNK is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching, low gate charge, and low RDS(on). It is designed for power switching applications, DC-DC converters, and power management systems. The device is 100% tested for single pulse avalanche energy.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP015N16GHNK
  • Technology: Advanced Split Gate Trench Technology
  • Package: PDFN5X6-8L

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Absolute Maximum Ratings
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 40 A
Continuous Drain Current (Tc=100) ID 25 A
Pulsed Drain Current IDM 160 A
Single Pulse Avalanche Energy EAS 240 mJ
Power Dissipation (Tc=25) PD 105 W
Thermal Resistance Junction-to-Case RJC 1.19 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 150 - - V
Drain Cut-Off Current IDSS VDS = 120V, VGS = 0V - - 1 A
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 A
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 3.0 4.0 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 16 20 m
Dynamic Characteristics
Input Capacitance Ciss VDS = 75V, VGS = 0V, f = 1.0MHz - 1869 - pF
Output Capacitance Coss - 153 - pF
Reverse Transfer Capacitance Crss - 9 - pF
Total Gate Charge Qg VDS=75V , VGS=10V , ID=20A - 25 - nC
Gate-Source Charge Qgs - 7.8 -
Gate-Drain Charge Qgd - 4 -
Switching Characteristics
Turn-On Delay Time td(on) VGS = 10V, VDS = 50V, ID = 20A, RG = 6 - 13 - nS
Rise Time tr - 5 -
Turn-Off Delay Time td(off) - 21 -
Fall Time tf - 5 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 40 A
Body Diode Reverse Recovery Time trr IS=20A, di/dt=100A/us, TJ=25 - 70 - nS
Body Diode Reverse Recovery Charge Qrr - 156 - nC
PDFN5X6-8L Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12
Order Information Package Unit/Tape
SP015N16GHNK PDFN5X6-8L 5000

2504101957_Siliup-SP015N16GHNK_C42372348.pdf
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