Fast Switching N Channel Planar MOSFET Siliup SP30N27TQ with 270V Drain Source Voltage in TO 220 3L

Key Attributes
Model Number: SP30N27TQ
Product Custom Attributes
Drain To Source Voltage:
270V
Configuration:
-
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
-
Output Capacitance(Coss):
238pF
Input Capacitance(Ciss):
1.916nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
SP30N27TQ
Package:
TO-220-3L-C
Product Description

Product Overview

The SP30N27TQ is a 270V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching applications and synchronous rectification. The device is 100% tested for single pulse avalanche energy and is supplied in a TO-220-3L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: N-Channel Planar MOSFET
  • Package: TO-220-3L
  • Device Code: 30N27

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 270 V
RDS(on)TYP RDS(on) @10V 100 m
Continuous Drain Current ID 30 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) 270 V
Gate-Source Voltage VGS (Ta=25) 20 V
Continuous Drain Current ID (TC=25) 30 A
Continuous Drain Current ID (TC=100) 20 A
Pulsed Drain Current IDM 120 A
Single Pulse Avalanche Energy EAS 845 mJ
Power Dissipation PD (TC=25) 150 W
Thermal Resistance Junction-to-Case RJC 0.83 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 270 - - V
Drain-Source Leakage Current IDSS VDS=216V , VGS=0V , TJ=25 - - 10 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2 3 4 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=15A - 100 120 m
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 1916 - pF
Output Capacitance Coss VDS=25V , VGS=0V , f=1MHz - 238 - pF
Reverse Transfer Capacitance Crss VDS=25V , VGS=0V , f=1MHz - 23 - pF
Total Gate Charge Qg VDS=200V , VGS=10V , ID=30A - 36 - nC
Gate-Source Charge Qgs VDS=200V , VGS=10V , ID=30A - 12 - nC
Gate-Drain Charge Qg d VDS=200V , VGS=10V , ID=30A - 15 - nC
Turn-On Delay Time Td(on) VDD=125V VGS=10V , RG=10, ID=30A - 31 - nS
Rise Time Tr VDD=125V VGS=10V , RG=10, ID=30A - 82 - nS
Turn-Off Delay Time Td(off) VDD=125V VGS=10V , RG=10, ID=30A - 49 - nS
Fall Time Tf VDD=125V VGS=10V , RG=10, ID=30A - 20 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 30 A
Reverse Recovery Time Trr IS=30A, di/dt=100A/us, TJ=25 - 235 - nS
Reverse Recovery Charge Qrr IS=30A, di/dt=100A/us, TJ=25 - 1966 - nC

Package Dimensions (TO-220-3L):

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

2504101957_Siliup-SP30N27TQ_C42372378.pdf

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