Power MOSFET Shenzhen ruichips Semicon RU40120M designed for fast switching and power conversion
Key Attributes
Model Number:
RU40120M
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-
RDS(on):
4.5mΩ@10V,60A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
345pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.7nF
Output Capacitance(Coss):
680pF
Pd - Power Dissipation:
96W
Gate Charge(Qg):
-
Mfr. Part #:
RU40120M
Package:
PDFN-8(5.8x4.9)
Product Description
Product Overview
The RU40120M is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, featuring a super high dense cell design for ultra-low on-resistance and fast switching speed. It is 100% avalanche tested and available in lead-free and green devices. This MOSFET is ideal for DC/DC converters and power supply applications.
Product Attributes
- Brand: Ruichips Semiconductor Co., Ltd
- Model: RU40120M
- Package: PDFN5060
- Certifications: Lead Free and Green Devices Available (RoHS Compliant)
- Origin: CHINA
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 40 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 2 | 4 | V | |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, IDS=60A | 2.7 | 4.5 | m | |
| Diode Forward Voltage | VSD | ISD=60A, VGS=0V | 1.2 | V | ||
| Reverse Recovery Time | trr | ISD=60A, dlSD/dt=100A/s | 33 | ns | ||
| Reverse Recovery Charge | Qrr | ISD=60A, dlSD/dt=100A/s | 30 | nC | ||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 1.8 | |||
| Input Capacitance | Ciss | VDS=32V, VGS=10V, IDS=60A | 3700 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=20V, Frequency=1.0MHz | 680 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=20V, Frequency=1.0MHz | 345 | pF | ||
| Turn-on Delay Time | td(ON) | VDD=20V,IDS=60A, VGEN=10V,RG=4.7 | 36 | ns | ||
| Turn-on Rise Time | tr | VDD=20V,IDS=60A, VGEN=10V,RG=4.7 | 205 | ns | ||
| Turn-off Delay Time | td(OFF) | VDD=20V,IDS=60A, VGEN=10V,RG=4.7 | 85 | ns | ||
| Turn-off Fall Time | tf | VDD=20V,IDS=60A, VGEN=10V,RG=4.7 | 45 | ns | ||
| Total Gate Charge | Qg | VDS=32V, IDS=60A | 90 | nC | ||
| Gate-Source Charge | Qgs | VDS=32V, IDS=60A | 32 | nC | ||
| Gate-Drain Charge | Qgd | VDS=32V, IDS=60A | 37 | nC | ||
| Continuous Drain Current@TC | ID | VGS=10V, TC=25C | 120 | A | ||
| Continuous Drain Current@TC | ID | VGS=10V, TC=100C | 75 | A | ||
| Continuous Drain Current@TA | ID | VGS=10V, TA=25C | 21 | A | ||
| Continuous Drain Current@TA | ID | VGS=10V, TA=70C | 17 | A | ||
| Pulse Drain Current | IDP | VGS=10V, TC=25C | 480 | A | ||
| Diode Continuous Forward Current | IS | TC=25C | 50 | A | ||
| Drain-Source Avalanche Ratings | EAS | VGS=0V, IAS=40A, VDD = 32V, RG = 50, Starting TJ = 25C | 400 | mJ | ||
| Thermal Resistance-Junction to Case | RJC | 1.3 | C/W | |||
| Thermal Resistance-Junction to Ambient | RJA | Mounted on Large Heat Sink | 30 | C/W | ||
| Maximum Power Dissipation@TC | PD | TC=25C | 96 | W | ||
| Maximum Power Dissipation@TA | PD | TA=25C | 4.2 | W | ||
| Maximum Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | 150 | C |
2410122015_Shenzhen-ruichips-Semicon-RU40120M_C180961.pdf
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