Shenzhen ruichips Semicon RU7570L N Channel Power MOSFET Featuring 75V 70A and Low RDS ON Resistance
Key Attributes
Model Number:
RU7570L
Product Custom Attributes
Drain To Source Voltage:
75V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-
RDS(on):
12mΩ@10V,35A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.85nF
Output Capacitance(Coss):
150pF
Pd - Power Dissipation:
103W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
RU7570L
Package:
TO-252
Product Description
RU7570L N-Channel Advanced Power MOSFET
The RU7570L is an N-Channel Advanced Power MOSFET featuring a 75V/70A rating with a low RDS(ON) of 9m (Typ.) at VGS=10V. It utilizes a Super High Dense Cell Design for fast switching and is fully avalanche rated, ensuring reliability and ruggedness. This device is 100% avalanche tested and available in Lead Free and Green Devices (RoHS Compliant), making it suitable for high-speed power switching applications.
Product Attributes
- Brand: Ruichips Semiconductor Co., Ltd
- Origin: CHINA
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Condition | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Common Ratings (TC=25C Unless Otherwise Noted) | ||||||
| VDSS | Drain-Source Voltage | V | 75 | |||
| VGSS | Gate-Source Voltage | V | 25 | |||
| TJ | Maximum Junction Temperature | C | 175 | |||
| TSTG | Storage Temperature Range | C | -55 | 175 | ||
| ID | Continuous Drain Current(VGS=10V) | TC=25C | A | 70 | ||
| ID | Continuous Drain Current(VGS=10V) | TC=100C | A | 51 | ||
| IDP | 300s Pulse Drain Current | TC=25C | A | 280 | ||
| PD | Maximum Power Dissipation | TC=25C | W | 103 | ||
| PD | Maximum Power Dissipation | TC=100C | W | 52 | ||
| RJC | Thermal Resistance-Junction to Case | C/W | 1.45 | |||
| EAS | Avalanche Energy, Single Pulsed | mJ | 169 | |||
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250A | V | 75 | ||
| IDSS | Zero Gate Voltage Drain Current | VDS= 75V, VGS=0V | A | 1 | ||
| IDSS | Zero Gate Voltage Drain Current | TJ=85C | A | 30 | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | V | 2 | 3 | 4 |
| IGSS | Gate Leakage Current | VGS=25V, VDS=0V | nA | 100 | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS= 10V, IDS=35A | m | 9 | 12 | |
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD=35A, VGS=0V | V | 1.2 | ||
| trr | Reverse Recovery Time | ISD=35A, dlSD/dt=100A/s | ns | 38 | ||
| Qrr | Reverse Recovery Charge | ISD=35A, dlSD/dt=100A/s | nC | 45 | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=40V, Frequency=1.0MHz | pF | 2850 | ||
| Coss | Output Capacitance | VGS=0V, VDS=40V, Frequency=1.0MHz | pF | 320 | ||
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=40V, Frequency=1.0MHz | pF | 150 | ||
| td(ON) | Turn-on Delay Time | VDD=40V, RL=1.2, IDS=35A, VGEN= 10V, RG=4.7 | ns | 27 | ||
| tr | Turn-on Rise Time | VDD=40V, RL=1.2, IDS=35A, VGEN= 10V, RG=4.7 | ns | 32 | ||
| td(OFF) | Turn-off Delay Time | VDD=40V, RL=1.2, IDS=35A, VGEN= 10V, RG=4.7 | ns | 93 | ||
| tf | Turn-off Fall Time | VDD=40V, RL=1.2, IDS=35A, VGEN= 10V, RG=4.7 | ns | 68 | ||
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS=60V, VGS= 10V, IDS=35A | nC | 68 | ||
| Qgs | Gate-Source Charge | VDS=60V, VGS= 10V, IDS=35A | nC | 12 | ||
| Qgd | Gate-Drain Charge | VDS=60V, VGS= 10V, IDS=35A | nC | 23 | ||
Applications
High Speed Power Switching
Ordering and Marking Information
| Device Marking | Package | Packaging | Quantity | Reel Size | Tape width |
|---|---|---|---|---|---|
| RU7570L | TO-252 | Tape&Reel | 2500 | 13 | 16mm |
Package Information
TO252-2L
2409302202_Shenzhen-ruichips-Semicon-RU7570L_C128586.pdf
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