S1M040120D 1200V Silicon Carbide Power MOSFET with Fully Controllable dvdt and IGBT Compatible Drive
Product Overview
The S1M040120D is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt, making it suitable for applications requiring high efficiency and reduced cooling efforts. Its robust design also features a high blocking voltage with low on-resistance and a fast intrinsic diode with low reverse recovery. Key benefits include increased power density and the ability to operate at higher system switching frequencies.
Key Features & Benefits
- High speed switching
- Very low switching losses
- IGBT-compatible driving voltage (15V for turn-on)
- Fully controllable dv/dt
- High blocking voltage with low on-resistance
- Fast intrinsic diode with low reverse recovery (Qrr)
- Temperature independent turn-off switching losses
- Cooling effort reduction
- Efficiency improvement
- Increased power density
- Increased system switching frequency
Applications
- On-board charger/PFC
- EV battery chargers
- Booster/DC-DC converter
- Switch mode power supplies
Product Attributes
- Brand: (Sichain Semiconductor)
- Origin: (Ningbo)
- Material: Silicon Carbide (SiC)
- Compliance: Halogen free, RoHS compliant
Technical Specifications
| Parameter | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|
| Type | S1M040120D | |||
| Drain-Source Voltage (VDS,max) | 1200 | V | VGS = 0V, ID = 100A | |
| Gate-Source Voltage (VGS,max) | -8 / +22 | V | Absolute maximum values | Note1 |
| Gate-Source Voltage (VGSop) | -4 / +15 | V | Recommended operational values | |
| Continuous Drain Current (ID) | 73 | A | VGS = 15V, TC = 25C | Fig.19 |
| Continuous Drain Current (ID) | 51 | A | VGS = 15V, TC = 100C | |
| Pulsed Drain Current (ID(pulse)) | 120 | A | Pulse width tP limited by Tj,max | Fig.22 |
| Power Dissipation (PD) | 326 | W | TC= 25C, TJ = 175C | Fig.20 |
| Operating Junction and Storage Temperature (TJ, Tstg) | -55 to +175 | C | ||
| Soldering Temperature (TL) | 260 | C | 1.6mm (0.063) from case for 10s | |
| Mounting Torque | 8.8 | lbf-in | M3 or 6-32 screw | |
| Thermal Resistance (Rth(j-c)) | 0.46 | C/W | Fig.21 | |
| Thermal Resistance (Rth(j-a)) | 39 | Not subject to production test. Parameter verified by design/characterization. | 1 | |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 1200 | V | VGS = 0V, ID = 100A | |
| Gate Threshold Voltage (VGS(th)) | 2.3 / 2.8 / 3.6 | V | VDS = VGS, ID = 10mA | Fig.11 |
| Gate Threshold Voltage (VGS(th)) at TJ = 175C | 2.0 | V | VDS = VGS, ID = 10mA | |
| Zero Gate Voltage Drain Current (IDSS) | 1 | A | VDS = 1200V, VGS = 0V | Max value is 10 A |
| Gate Source Leakage Current (IGSS) | 100 | nA | VGS = 15V, VDS = 0V | |
| On-State Resistance (RDS(on)) | 40 / 50 | m | VGS = 15V, ID = 33.3A | Fig.4, 5,6 |
| On-State Resistance (RDS(on)) at TJ = 175C | 62 | m | VGS = 15V, ID = 33.3A | |
| On-State Resistance (RDS(on)) | 32 / 40 | m | VGS = 18V, ID = 33.3A | |
| On-State Resistance (RDS(on)) at TJ = 175C | 59 | m | VGS = 18V, ID = 33.3A | |
| Transconductance (gfs) | 17 | S | VDS = 20V, ID = 33.3A | Fig.7 |
| Transconductance (gfs) at TJ = 175C | 16 | S | VDS = 20V, ID = 33.3A | |
| Internal Gate Resistance (Rg,int) | 0.9 | VAC = 25mV, f = 1MHz | ||
| Diode Forward Voltage (VSD) | 3.8 | V | VGS = -4V, ISD = 20A | Fig.8,9, 10 |
| Diode Forward Voltage (VSD) at TJ = 175C | 3.4 | V | VGS = -4V, ISD = 20A | |
| Input Capacitance (Ciss) | 2159 | pF | VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100KHz | Fig.17,18 |
| Output Capacitance (Coss) | 127 | pF | ||
| Reverse Capacitance (Crss) | 10 | |||
| Output Capacitor Stored Energy (Eoss) | 79 | J | Fig.16 | |
| Gate Source Charge (Qgs) | 16 | nC | VDS = 800V, VGS = -4/+15V, ID = 33.3A | Fig.12 |
| Gate Drain Charge (Qgd) | 36 | |||
| Gate Charge (Qg) | 76 | |||
| Turn On Switching Energy (Eon) | 934 | J | VDS = 800V, VGS = -4/+15V, ID = 33.3A, Rg = 2.5, L = 120uH | Fig.26 |
| Turn Off Switching Energy (Eoff) | 60 | J | VDS = 800V, VGS = -4/+15V, ID = 33.3A, Rg = 2.5, L = 120uH | Fig.26 |
| Turn On Delay Time (td(on)) | 40 | ns | Fig.27 | |
| Rise Time (tr) | 16 | ns | Fig.27 | |
| Turn Off Delay Time (td(off)) | 23 | ns | Fig.27 | |
| Fall Time (tf) | 8.8 | ns | Fig.27 | |
| Continuous Diode Forward Current (IS) | 76 | A | VGS = -4V, Tc = 25C | Note1 |
| Reverse Recovery Time (trr) | 40 | nS | VR = 800V, VGS = -4V, ID = 33.3A, di/dt = 1947A/S, TJ = 175C | |
| Reverse Recovery Charge (Qrr) | 640 | nC | VR = 800V, VGS = -4V, ID = 33.3A, di/dt = 1947A/S, TJ = 175C | |
| Peak Reverse Recovery Current (Irrm) | 32 | A | VR = 800V, VGS = -4V, ID = 33.3A, di/dt = 1947A/S, TJ = 175C | |
| Package | TO-247-3L | |||
| Marking | S1M040120D |
Package Drawing
TO-247-3L
Revision History
V01_00: 2022-12-30
V02_00: 2023-09-15
Attention
1. RoHS Compliance: The levels of RoHS restricted materials in this product are below the maximum concentration values permitted, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2).
2. REACH Compliance: REACh substances of high concern (SVHCs) information is available. Please contact a Sichain representative for the most up-to-date REACh SVHC Declaration. REACh banned substance information is also available upon request.
3. Application Information: Sichain disclaims all warranties and liabilities regarding the application of the product, including non-infringement of third-party intellectual property rights.
4. Customer Compliance: Information provided is subject to customer's compliance with their obligations and applicable legal requirements.
5. Product Specifications: Specifications describe the product in its independent state and are not guarantees of performance in customer's products or equipment.
6. Dangerous Substances: Products may contain dangerous substances. Contact Sichain for details.
7. Personal Injury: Sichain products may not be used in applications where failure could reasonably be expected to result in personal injury, unless explicitly approved in writing by Sichain.
8. High Reliability Applications: For use in applications requiring high reliability (e.g., transportation, communication, safety, medical systems), please consult with a Sichain representative.
2410121937_Sichainsemi-S1M040120D_C22363606.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
